PESDxS5UD series
Fivefold ESD protection diode arrays
Rev. 02 — 7 December 2006
Product data sheet
1. Product profile
1.1 General description
Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines
from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
ESD protection of up to five lines
Max. peak pulse power: P
PP
= 200 W
Ultra low leakage current: I
RM
= 50 pA
Low clamping voltage: V
CL
= 12 V at
I
PP
= 20 A
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5 (surge); I
PP
up to 20 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
Quick reference data
…continued
Parameter
diode capacitance
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Conditions
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
215
165
73
60
45
300
220
100
90
70
pF
pF
pF
pF
pF
Min
Typ
Max
Unit
Table 1.
Symbol
C
d
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode 1
common anode
cathode 2
cathode 3
cathode 4
cathode 5
1
2
3
6
5
4
1
2
3
006aaa159
Simplified outline
Symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
E1
E2
E3
E4
E5
Type number
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
PESDXS5UD_SER_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 7 December 2006
2 of 13
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
peak pulse power
peak pulse current
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
−65
−65
Max
200
20
20
10
6
4
150
+150
+150
Unit
W
A
A
A
A
A
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to 2.
Table 6.
Symbol
Per diode
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
PESDxS5UD series
MIL-STD-883 (human
body model)
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4, 5 or 6 to 2.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 10 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESDXS5UD_SER_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 7 December 2006
3 of 13
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
reverse standoff voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
I
RM
reverse leakage current
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
V
BR
breakdown voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 1 mA
5.3
6.4
12.5
17
25.5
5.6
6.8
14.5
18
27
5.9
7.2
16
19
29
V
V
V
V
V
-
-
-
-
-
300
80
0.05
0.05
0.05
800
200
15
15
15
nA
nA
nA
nA
nA
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
PESDXS5UD_SER_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 7 December 2006
4 of 13
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
Table 8.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
C
d
diode capacitance
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
V
CL
clamping voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
r
dif
[1]
[2]
[1][2]
Conditions
f = 1 MHz; V
R
= 0 V
Min
-
-
-
-
-
Typ
215
165
73
60
45
-
-
-
-
-
-
-
-
-
-
-
Max
300
220
100
90
70
8
12
8
13
17
24
22
33
33
52
25
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
Ω
I
PP
= 1 A
I
PP
= 20 A
I
PP
= 1 A
I
PP
= 20 A
I
PP
= 1 A
I
PP
= 10 A
I
PP
= 1 A
I
PP
= 6 A
I
PP
= 1 A
I
PP
= 4 A
I
R
= 5 mA
-
-
-
-
-
-
-
-
-
-
-
differential resistance
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to 2.
10
4
P
PP
(W)
10
3
006aaa698
1.2
P
PP
P
PP(25°C)
0.8
001aaa633
10
2
0.4
10
1
1
10
10
2
10
3
t
p
(µs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
PESDXS5UD_SER_2
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 7 December 2006
5 of 13
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
