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GS81313HD18K-625I

产品描述DDR SRAM, 8MX18, CMOS, PBGA260, 14 X 22 MM, 1 MM PITCH, BGA-260
产品类别存储    存储   
文件大小388KB,共25页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
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GS81313HD18K-625I概述

DDR SRAM, 8MX18, CMOS, PBGA260, 14 X 22 MM, 1 MM PITCH, BGA-260

GS81313HD18K-625I规格参数

参数名称属性值
厂商名称GSI Technology
包装说明HBGA,
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
JESD-30 代码R-PBGA-B260
长度22 mm
内存密度150994944 bit
内存集成电路类型DDR SRAM
内存宽度18
功能数量1
端子数量260
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
组织8MX18
封装主体材料PLASTIC/EPOXY
封装代码HBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, HEAT SINK/SLUG
并行/串行PARALLEL
座面最大高度2.3 mm
最大供电电压 (Vsup)1.3 V
最小供电电压 (Vsup)1.15 V
标称供电电压 (Vsup)1.2 V
表面贴装YES
技术CMOS
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度14 mm
Base Number Matches1

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Advanced Information
GS81313HD18/36K-675/625/550/500
260-Pin BGA
Commercial Temp
Industrial Temp
Features
4Mb x 36 and 8Mb x 18 organizations available
675 MHz maximum operating frequency
675 MT/s peak transaction rate (in millions per second)
97 Gb/s peak data bandwidth (in x36 devices)
Separate I/O DDR Data Buses
Non-multiplexed SDR Address Bus
One operation - Read or Write - per clock cycle
Burst of 4 Read and Write operations
3 cycle Read Latency
On-chip ECC with virtually zero SER
1.2V or 1.25V core voltage
1.5V HSTL I/O interface
Configurable ODT (on-die termination)
ZQ pin for programmable driver impedance
ZT pin for programmable ODT impedance
IEEE 1149.1 JTAG-compliant Boundary Scan
260-pin, 14 mm x 22 mm, 1 mm ball pitch BGA package
–K: 5/6 RoHS-compliant package
–GK: 6/6 RoHS-compliant package
144Mb SigmaQuad-IIIe™
Burst of 4 ECCRAM™
Clocking and Addressing Schemes
Up to 675 MHz
1.2V / 1.25V V
DD
1.5V V
DDQ
The GS81313HD18/36K SigmaQuad-IIIe ECCRAMs are
synchronous devices. They employ three pairs of positive and
negative input clocks; one pair of master clocks, CK and CK,
and two pairs of write data clocks, KD[1:0] and KD[1:0]. All
six input clocks are single-ended; that is, each is received by a
dedicated input buffer.
CK and CK are used to latch address and control inputs, and to
control all output timing. KD[1:0] and KD[1:0] are used solely
to latch data inputs.
Each internal read and write operation in a SigmaQuad-IIIe B4
ECCRAM is four times wider than the device I/O bus. An
input data bus de-multiplexer is used to accumulate incoming
data before it is simultaneously written to the memory array.
An output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaQuad-IIIe B4 ECCRAM is always two address
pins less than the advertised index depth (e.g. the 8M x 18 has
2M addressable index).
SigmaQuad-IIIe™ Family Overview
SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the
SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance
ECCRAMs. Although very similar to GSI's second generation
of networking SRAMs (the SigmaQuad-II/SigmaDDR-II
family), these third generation devices offer several new
features that help enable significantly higher performance.
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by SER events such as cosmic rays, alpha particles,
etc. The resulting Soft Error Rate of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no on-chip ECC,
which typically have an SER of 200 FITs/Mb or more.
All quoted SER values are at sea level in New York City.
Parameter Synopsis
Speed Grade
-675
-625
-550
-500
Max Operating Frequency
675 MHz
625 MHz
550 MHz
500 MHz
Read Latency
3 cycles
3 cycles
3 cycles
3 cycles
V
DD
1.2V to 1.3V
1.15V to 1.3V
1.15V to 1.3V
1.15V to 1.3V
Rev: 1.05 5/2014
1/25
© 2014, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 
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