BFS481
Low Noise Silicon Bipolar RF Transistor
•
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
•
f
T
= 8 GHz,
NF
min
= 0.9 dB at 900 MHz
•
Two (galvanic) internal isolated Transistors in
one package
•
For orientation in reel see package information below
•
Easy to use Pb-free (RoHS compliant) and halogen
free industry standard package with visible leads
•
Qualification report according to AEC-Q101 available
4
5
6
1
2
3
C1
6
E2
5
B2
4
TR2
TR1
1
B1
2
E1
3
C2
EHA07196
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFS481
Marking
RFs
1=B
2=E
Pin Configuration
3=C
4=B
5=E
6=C
Package
SOT363
1
2013-06-18
BFS481
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
83 °C
12
20
20
2
20
2
175
150
-55 ... 150
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
2)
380
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 8 V, pulse measured
1
T
Unit
max.
-
100
100
1
140
V
µA
nA
µA
-
typ.
-
-
-
-
100
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12
-
-
-
70
S is measured on the collector lead at the soldering point of the pcb
2
For the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-06-18
BFS481
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
2)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 MHz
1
G
ms
2
G
ma
Unit
max.
-
0.4
GHz
pF
typ.
8
0.23
f
T
C
cb
6
-
C
ce
-
0.13
-
C
eb
-
0.4
-
NF
min
-
-
G
ms
-
0.9
1.2
20
-
-
-
dB
dB
G
ma
-
15
-
dB
|S
21e
|
2
-
-
16
11
-
-
dB
= |S
21
/
S
12
|
= |S
21e
/
S
12e
| (k-(k²-1)
1/2
)
3
2013-06-18
BFS481
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
200
mW
10
3
160
K/W
120
100
80
60
40
20
0
0
R
thJS
10
2
140
P
tot
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
20
40
60
80
100
120
°C
150
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
4
2013-06-18
P
ackage SOT363
BFS481
5
2013-06-18
嵌入式系统
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