BCR553
PNP Silicon Digital Transistor
•
Built in bias resistor (R
1
= 2.2 kΩ,
R
2
= 2.2 kΩ)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR553
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
S
≤
79 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Marking
XBs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
3=C
Package
SOT23
Value
50
50
20
10
500
330
150
mA
mW
°C
Unit
V
-65 ... 150
Value
≤
215
Unit
K/W
Junction - soldering point
1)
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-07-28
BCR553
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
I
C
= 100 µA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
40
-
0.6
1
1.5
0.9
-
-
-
-
-
-
-
2.2
1
-
100
3.5
-
0.3
1.5
1.8
2.9
1.1
k
Ω
-
nA
mA
-
V
Collector-base cutoff current
V
CB
= 50 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain-
I
C
= 50 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 50 mA,
I
B
= 2.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 10 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
1
Pulse
f
T
-
150
-
MHz
test: t < 300µs; D < 2%
2
2011-07-28
BCR553
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(
I
C
),
I
C
/I
B
= 20
0.5
V
V
CEsat
h
FE
10
2
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.4
0.35
0.3
0.25
0.2
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
1
0.15
0.1
0.05
10
0 -4
10
-3
-2
-1
0
10
10
10
A
10
0
-2
10
10
-1
A
10
0
I
C
I
C
Input on Voltage
V
i
(on)
=
ƒ
(
I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
ƒ
(
I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(on)
V
i(off)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -4
10
10
-3
10
-2
10
-1
A
10
0
10
-1 -5
10
10
-4
10
-3
A
10
-2
I
C
I
C
3
2011-07-28
BCR553
Total power dissipation
P
tot
=
ƒ
(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
400
mW
10
3
K/W
300
10
2
250
R
thJS
10
1
P
tot
200
150
10
0
100
50
10
-1 -6
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
0
20
40
60
80
100
120
°C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
10
4
-
P
totmax
/P
totDC
10
3
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
4
2011-07-28
Package SOT23
BCR553
Package Outline
0.15 MIN.
1
±0.1
0.1 MAX.
1.3
±0.1
2.9
±0.1
3
B
2.4
±0.15
10˚ MAX.
1)
0.4
+0.1
-0.05
1
2
10˚ MAX.
C
0.95
1.9
0.08...0.1
0...8˚
A
5
0.25
M
B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH
s
Pin 1
0.9
1.3
2005, June
Date code (YM)
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
2.13
2.65
0.2
8
Pin 1
3.15
1.15
5
2011-07-28
嵌入式系统
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