BC857...-BC860...
PNP Silicon AF Transistor
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 hz and 15 kHz
•
Complementary types:
BC847...-BC850... (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
1
BC857BL3
is not qualified according AEC Q101
Type
BC857A
BC857B
BC857BL3*
BC857BW
BC857C
BC857CW
BC858A
BC858B
BC858BW
BC858C
BC858CW
BC859C
BC860B
BC860BW
BC860CW
Marking
3Es
3Fs
3F
3Fs
3Gs
3Gs
3Js
3Ks
3Ks
3Ls
3Ls
4Cs
4Fs
4Fs
4Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT323
* Not qualified according AEC Q101
1
2011-09-19
BC857...-BC860...
Maximum Ratings
Parameter
Collector-emitter voltage
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Total power dissipation
T
S
≤
71 °C, BC857-BC860
T
S
≤
135 °C, BC857BL3
T
S
≤
124 °C, BC857W-BC860W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC857-BC860
BC857BL3
BC857W-BC860W
T
j
T
stg
Symbol
R
thJS
Symbol
V
CEO
Value
45
30
Unit
V
V
CBO
50
30
V
EBO
I
C
I
CM
P
tot
330
250
250
150
-65 ... 150
Value
≤
240
≤
60
≤
105
Unit
K/W
°C
5
100
200
mW
mA
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-19
BC857...-BC860...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10 mA,
I
B
= 0 , BC857..., BC860...
I
C
= 10 mA,
I
B
= 0 , BC858..., BC859...
Unit
V
45
30
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC857..., BC860...
I
C
= 10 µA,
I
E
= 0 , BC858..., BC859...
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
140
250
480
180
290
520
0.015
5
-
-
-
-
250
475
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
125
220
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
75
250
700
850
650
-
300
650
-
-
750
820
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse
600
-
test: t < 300µs; D < 2%
3
2011-09-19
BC857...-BC860...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
C
cb
C
eb
h
11e
Symbol
min.
-
-
-
Values
typ.
250
1.5
8
max.
-
-
-
Unit
MHz
pF
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.C
kΩ
-
-
-
2.7
4.5
8.7
1.5
2
3
200
330
600
18
30
60
1
-
-
-
10
-4
-
-
-
-
-
-
-
-
-
-
-
-
-
µS
-
-
-
-
-
-
4
dB
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.C
h
12e
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.C
h
21e
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
, h
FE
-grp.C
h
22e
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
f
= 1 kHz,
F
-
∆
f
= 200 Hz,
R
S
= 2 kΩ, BC859, BC850
Equivalent noise voltage
I
C
= 200 mA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10...50 Hz, BC860
V
n
-
-
0.11
µV
4
2011-09-19
BC857...-BC860...
DC current gain
h
FE
=
ƒ(
I
C
)
V
CE
= 1 V
10
3
EHP00382
Collector-emitter saturation voltage
I
C
=
ƒ(
V
CEsat
),
h
FE
= 20
10
2
EHP00380
h
FE
5
100 C
25 C
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
5
10
1
5
10
5
0
10
0
10
-2
5 10
-1
5 10
0
5 10
1
mA 10
2
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
V
CEsat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ(
V
BEsat
),
h
FE
= 20
10
2
mA
EHP00379
Collector cutoff current
I
CBO
=
ƒ(
T
A
)
V
CBO
= 30 V
10
4
nA
EHP00381
Ι
C
100 C
25 C
-50C
Ι
CB0
10
3
5
10
2
5
10
1
5
10
5
0
10
5
1
max
typ
10
0
5
10
-1
10
-1
0
0.2
0.4
0.6
0.8
V
1.2
V
BEsat
0
50
100
C
T
A
150
5
2011-09-19
Microchip MCU
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