AUSTIN SEMICONDUCTOR, INC.
SOLID
STATE DISK
STA
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
PRELIMINARY
Austin Semiconductor, Inc.
Solid State Disk On Chip
(SSDoC)
FEATURES
•
Capacities
-
4 GB
-
8 GB
-
16 GB
•
PATA Compatibility
-
ATA-5 compatible
-
UDMA4 supported
-
PIO Mode 4 supported
-
MWDMA Mode 2 supported
•
Performance
-
Sustained Sequential Read Bandwidth:16 MB/s
-
Sustained Sequential Write Bandwidth: 5 MB/s
•
Form Factor
-
BGA Package
• 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H)
• Weighs approximately 11 grams (TYP)
•
Each NAND component, either a 4, 8 or 16Gb
device, based on the use of single and stacked
silicon solutions
•
ECC correction = 6 Bytes within a 512 Byte
sector
•
Automatic sleep mode
•
Controller contained in base interposer
•
SLC (Single-Level Cell) NAND Flash
•
Reliability
-
Mean Time Between Failure (MTBF)
>2,000,000 Hours (est.)
-
Program/Erase >1,000,000 Times (est.)
-
Temp Cycle 500/1000 cycles, JEDEC A104
Condition B -55ºC to +125ºC
•
Power Supply Voltage: 5.0V or 3.3 V ± 10%
(TYP)
•
Power Consumption (Vcc = 5.0 V)
-
Idle: 10 mW (TYP)
-
Active: 255 mW (TYP)
•
Operating Temperature
-
Commercial: 0C to 70C
-
Industrial: -45C to 85C
•
Shock and Vibration
-
Shock: 1500G MIL-STD0810F
-
Vibration: 15 G RMS MIL-STD0810F
•
Compliances
-
Lead free
-
RoHS
- Sn/Pb Ball Option
OVERVIEW
The solid state disk is based on a proprietary
package stacking technology to create an extremely
space conscious, robust Solid State Disk. The SSD
is capable of operating in harsh, vibration prone
product platforms such embedded computing
applications, heavy transportation, ultra portables,
handhelds,
mobile
computing,
digital
radio, high-speed networking & enterprise
applications, as well as, military, aerospace and
industrial applications.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
AUSTIN SEMICONDUCTOR, INC.
SOLID
STATE DISK
STA
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
PRELIMINARY
Austin Semiconductor, Inc.
KEY FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
NAND FLASH Controller
(2) stacks, each containing (2 or 4) NAND components
Each NAND component, either a 4,8 or 16Gb device, based on the use of single
silicon and stacked silicon solutions
Providing a total bit density of either 4,8 or 16GB
Controller contained in base interposer
Fast ATA host to buffer transfer rates supporting True IDE, PIO/4 mode support
512Byte Sector Buffers
Flash Memory power-down logic
ECC correction = 6 Bytes within a 512 Byte sector
Automatic Sleep Mode
Burst Transfer rate, 16.67MB per second
Sustained Transfer rate: 6.7MB per second
Sophisticated Wear Leveling
ARCHITECTURE
The PATA controller in the PATA Solid State Drive utilizes a 32-bit RISC architecture which provides for
direct connection of one, two or four NAND flash memory devices (2 per channel). An on-chip error
correction code (ECC) and cyclic redundancy check (CRC) unit generates the required code bytes
facilitating error detection and correction of up to six bytes per 512 byte data sector. On the fly code
byte generation for read and write operations minimizes ECC performance impacts.
The controller’s flash memory interface allows the direct connection of up to 10 chips and support
Samsung (NAND) type flash memory. ASI PATA Solid State Drives use single level cell (SLC) Samsung
NAND Flash Memory devices.
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
AUSTIN SEMICONDUCTOR, INC.
SOLID
STATE DISK
STA
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
PRELIMINARY
Austin Semiconductor, Inc.
BLOCK DIAGRAM
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
Controller
16 Gb
Dual
enable
NAND
IDE Interface
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
REGULATORY COMPLIANCE
Since the PATA SSD is a component (or a set of components depending on the configuration) on the
motherboard, system certifications are the responsibility of the OEM or ODM.
DEVICE COMPLIANCE
Compliance
PB Free
RoHS
Description
Components and materials are lead free.
Restriction of Hazardous Substance Directive
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
AUSTIN SEMICONDUCTOR, INC.
SOLID
STATE DISK
STA
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
PRELIMINARY
Austin Semiconductor, Inc.
PRODUCT SPECIFICATIONS
Capacity and User Addressable Sectors
Unformatted
4GB*
8GB*
16GB*
User Addressable Sector in LBA mode
7,880,544
15,761,088
31,522,176
Note:
Formatting and other functions will use some of the space, thus
the listed capacity will not be available entirely for data storage.
Read and Write Perfomance
Operation
READ
WRITE
Access Type
Sustained Sequential Read Bandwidth
Sustained Sequential Write Bandwidth
MB/second
16 MB/second
5 MB/second
OPERATING CONDITIONS
Maximum Ratings
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not guaranteed.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Absolute Maximum Ratings by Device
Parameter
Vcc supply voltage
Non-Operation Temperature
Symbol
Vcc_P
Ti
Max.
-0.5
-40
Min.
+5.5
+85
Unit
V
o
C
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
AUSTIN SEMICONDUCTOR, INC.
SOLID
STATE DISK
STA
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
PRELIMINARY
Austin Semiconductor, Inc.
OPERATING CONDITIONS (continued)
Recommended Operating Conditions
Operating Temperature and Voltages
Parameter
Industrial: 0
o
C to +70
o
C
Commercial: -40
o
C to +85
o
C
Vcc supply voltage
Ground supply voltage
Symbol
T
0
T
0
Tcc_P
Tcc_P
GndPLN
Max.
0
0
4.5
3.0
0
Typ
-
-
5
3.3
0
Min.
70
70
5.5
3.6
0
Unit
o
o
C
C
V
V
V
DC Characteristics (PATA controller configuration)
Symbol
Paramenter
V
IL
Input LOW Voltage
V
IH
V
OL
V
OH
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Operating Current, V
CC_R
=5.0V
I
CC
Sleep Mode
Operating, 20 MHz
Operating, 40 MHz
Operating Current, V
CC_R
=3.3V
I
CC
Sleep Mode
Operating, 20 MHz
I
LI
I
LO
C
I/O
Operating, 40 MHz
Input Leakage Current
Output Leakage Current
Input / Output Capacitance
0.2
30
50
.02
30
50
±10
±10
10
mA
mA
mA
m
m
m
μA
μA
pF
2.4
Min.
-0.3
2.2
Max.
+0.8
Vcc+0.3
0.45
Units
V
V
V
V
I
OL
=4mA
I
OH
=-1mA
Conditions
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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