2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1998, Power Innovations Limited, UK
AUGUST 1998
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
(BR)
DEVICE MINIMUM
V
2EL2
2EL3
2EL4
±245
V
(BO)
MINIMUM
V
±265
±200
±215
V
(BO)
MAXIMUM
V
±400
±265
±265
CELL PACKAGE
(SIDE VIEW)
T(A)
R(B)
MD4XANA
q
Rated for International Surge Wave Shapes
ITU-T K28
DEVICE
(10/700)
I
TSP
A
2EL2
2EL3
2EL4
±125
±125
±125
GR-974-CORE
(10/1000)
I
TSP
A
±100
±100
±100
device symbol
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
q
q
Gas Discharge Tube (GDT) Replacement
Planar Passivated Junctions in a Protected Cell Construction
Low Off-State Current
Extended Service Life
Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
q
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 2ELx must be installed in a housing which
maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides. This 2ELx range consists of three voltage variants to meet various
maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international
lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 2ELx’s copper electrodes is specially shaped to promote a progressive
shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 2ELx in compression,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 2ELx will fail short circuit, providing maximum protection to the equipment.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
5/310 µs (ITU-T K28, 10/700 µs voltage wave shape)
2EL2
2EL3
2EL4
10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape)
2EL2
2EL3
2EL4
Non-repetitive peak on-state current (see Note 1)
full sine wave, 50/60 Hz, 1 s
2EL2
2EL3
2EL4
Junction temperature
Storage temperature range
-40°C to 65°C
-20°C to 65°C
-40°C to 65°C
T
J
T
stg
I
TSM
10
10
10
-40 to +150
-40 to +150
°C
°C
A rms
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
I
TSP
125
125
125
100
100
100
A
SYMBOL
VALUE
UNIT
NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium.
2. Most PTT’s quote an unloaded voltage waveform. In operation the 2ELx essentially shorts the generator output. The resulting
loaded current waveform is specified.
electrical characteristics for the T and R terminals, T
A
= 25°C (unless otherwise noted)
PARAMETER
V
(BR)
Breakdown Voltage
TEST CONDITIONS
I
(BR)
= ±20 mA, (see Note 3)
2EL2
2EL2
V
(BO)
Breakover voltage
dv/dt = ±0.2 V/s,
R
SOURCE
> 200
Ω
2EL3
2EL4
V
(BO)
Impulse breakover
voltage
100 V/µs
≤
dv/dt
≤
±1000 V/µs,
di/dt
≤
10 A/µs
Sources are 52.5 V O.C., 260 mA S.C. and
Impulse reset
135 V O.C., 200 mA S.C.
on-state current 25 A, 10/1000 µs impulse
V
D
= ±50 V (see Note 4)
2EL2
2EL3
2EL4
2EL2
2EL3
2EL4
2EL2
2EL3
I
D
Off-state current
2EL4
V
D
= ±200 V
2EL2
2EL3
2EL4
f = 1 MHz,
C
off
Off-state capacitance
V
d
= 1 Vrms, V
D
= 0,
2EL2
2EL3
2EL4
-40°C to 65°C
+15°C to 25°C
-40°C to 65°C
+15°C to 25°C
-20°C to 65°C
25°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-20°C to 65°C
-40°C to 65°C
-20°C to 65°C
-40°C to 65°C
-40°C to 65°C
15°C to 25°C
0°C to 65°C
-40°C to 65°C
-20°C to 65°C
-40°C to 65°C
±215
±200
±265
±265
±400
±350
±350
20
20
20
±0.5
±0.5
±0.5
±10
±1
±10
150
150
150
pF
µA
ms
V
MIN
±245
±265
±400
V
TYP
MAX
UNIT
V
NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7)
4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment
PRODUCT
2
INFORMATION
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
V
(BR)
-v
I
(BR)
V
(BR)
V
D
I
D
I
D
V
D
I
(BR)
+v
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAG
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
INFORMATION
3
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
MECHANICAL DATA
cell package
BUTTON CELL 2ELx
0,508 (0.020)
MAX
Top Electrode
2,31 (0.091)
2,11 (0.083)
Sleeve
Bidirectional
Silicon Chip
0,178 (0.007)
MAX
Bottom Electrode
2xø
1,65 (0.065)
1,27 (0.050)
ø
4,27 (0.168)
3,76 (0.148)
ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES
MDXXAK
PRODUCT
4
INFORMATION
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1998, Power Innovations Limited
PRODUCT
INFORMATION
5
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