The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 October 1999.
INCH-POUND
MIL-PRF-19500/516D
23 July 1999
SUPERSEDING
MIL-S-19500/516C
20 January 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use within US Army Laboratory
Command, Department of the Army, and is available for use by all
Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:
PR =
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at TA = +25°C (see figure 5
for derating).
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at TL = +75°C for L = 0.375
inch (9.53 mm) (see figure 6).
PR =
PPR = 500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including
A and US suffix versions)) at tp = 1 ms (see figure 7).
-55°C
≤
Top
≤
+175°C, -55°C
≤
TSTG
≤
+175°C (ambient temperatures).
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
Distribution Statement A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/516D
Ltr.
BD
BL
ECT
S
Dimensions
D-5B
D-5DC
1N6102US through 1N6137US,
1N6138US through 1N6173US
1N6102AUS through 1N6137AUS
1N6138AUS through 1N6173AUS
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
.137
.148
3.48
3.76
.183
.202
4.65
5.13
.200
.225
5.08
5.72
.205
.245
5.21
6.22
.019
.028
0.48
0.71
.019
.028
0.48
0.71
.003
0.80
.003
0.80
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
4 Minimum clearance of glass body to mounting surface on all orientations.
FIGURE 2. Semiconductor device, diode 1N6102US through 1N6173US, 1N6102AUS through 1N6173AUS.
3
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
