DSI30-16A
Standard Rectifier
V
RRM
I
FAV
V
F
=
=
=
1600 V
30 A
1,25 V
Single Diode
Part number
DSI30-16A
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150402b
© 2015 IXYS all rights reserved
DSI30-16A
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0,82
14,1
0,50
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
10
160
300
325
255
275
450
440
325
315
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1700
V
1600
40
1,5
1,29
1,60
1,25
1,66
30
V
µA
mA
V
V
V
V
A
V
R
= 1600 V
V
R
= 1600 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 130 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0,9 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150402b
© 2015 IXYS all rights reserved
DSI30-16A
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0,4
20
0,6
60
Product Marking
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Ordering Number
DSI30-16A
Marking on Product
DSI30-16A
Delivery Mode
Tube
Quantity
50
Code No.
476528
Similar Part
DSI30-08A
DSI30-08AS
DSI30-08AC
DSI30-12A
DSI30-12AS
DSI30-12AC
DSI30-16AS
Package
TO-220AC (2)
TO-263AB (D2Pak) (2)
ISOPLUS220AC (2)
TO-220AC (2)
TO-263AB (D2Pak) (2)
ISOPLUS220AC (2)
TO-263AB (D2Pak) (2)
Voltage class
800
800
800
1200
1200
1200
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0,82
11
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150402b
© 2015 IXYS all rights reserved
DSI30-16A
Outlines TO-220
= supplier option
A
Dim.
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
ØP
Q
Q
E
A1
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
ØP
4
1
3
2x b2
L1
2x b
e
L
D
H1
C
A2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150402b
© 2015 IXYS all rights reserved
DSI30-16A
Rectifier
60
50
40
200
250
50 Hz, 80% V
RRM
500
V
R
= 0 V
400
I
F
30
I
FSM
[A]
20
T
VJ
= 125°C
150°C
T
VJ
= 45°C
300
It
200
150
T
VJ
= 150°C
2
T
VJ
= 45°C
[A]
[A s]
100
2
T
VJ
= 150°C
10
T
VJ
= 25°C
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
100
0.001
0
0.01
0.1
1
1
2
3
4 5 6 7 8 9
1 0
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
50
t [s]
Fig. 2 Surge overload current
2
t [ms]
Fig. 3 I t versus time per diode
40
P
tot
30
[W]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
40
30
I
F(AV)M
20
[A]
10
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
0
50
100
150
200
0
0
50
100
150
200
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
1.0
0.8
0.6
Constants for Z
thJC
calculation:
i R
thi
(K/W)
1 0.03
2 0.08
3 0.2
4 0.39
5 0.2
1
10
100
1000
10000
Z
thJC
0.4
t
i
(s)
0.0004
0.002
0.003
0.03
0.29
[K/W]
0.2
0.0
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150402b
© 2015 IXYS all rights reserved
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