GDZJ2.0~GDZJ56
PB FREE PRODUCT
AXIAL LEAD ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
DO-35
Unit: inch (mm)
FEATURES
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
1.02(26.0)MIN.
• Planar Die construction
.020(0.52)TYP.
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.012 grams
• Mounting Position: Any
• Ordering information
Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
1.02(26.0)MIN.
.165(4.2)MAX.
.079(2.0)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
Part Number
GDZJ 2.0
GDZJ 2.2
GDZJ 2.4
GDZJ 2.7
GDZJ 3.0
GDZJ 3.3
GDZJ 3.6
GDZJ 3.9
C LA S S
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
V
Z
@ I
ZT
M i n. V
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.455
3.60
3.74
3.89
4.04
4.17
4.30
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
M a x. V
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
10.44
10.71
11.05
11.38
IZ
(m A )
5
5
5
5
5
5
5
5
VR
(V )
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
IR ( u A )
MA X
120
100
120
100
50
20
10
5
Iz t
(mA )
5
5
5
5
5
5
5
5
Z
ZT
(Ω)
MA X
100
100
100
110
120
120
100
100
Iz k
(mA )
0.5
0.5
0.5
0.5
0.5
0.5
1
1
Z
ZK
(Ω)
MA X
1000
1000
1000
1000
1000
1000
1000
1000
M
A RK ING
C OD E
Z2A0
Z2B0
Z2A2
Z2B2
Z2A4
Z2B4
Z2A7
Z2B7
Z3A0
Z3B0
Z3A3
Z3B3
Z3A6
Z3B6
Z3A9
Z3B9
Z4A3
Z4B3
Z4C3
Z4A7
GDZJ 4.3
5
1.0
5
5
100
1
1000
GDZJ 4.7
B
C
A
5
1.0
5
5
90
1
900
Z4B7
Z4C7
Z5A1
GDZJ 5.1
B
C
A
5
1.5
5
5
80
1
800
Z5B1
Z5C1
Z5A6
GDZJ 5.6
B
C
A
5
2.5
5
5
60
1
500
Z5B6
Z5C6
Z6A2
GDZJ 6.2
B
C
A
5
3.0
5
5
60
1
300
Z6B2
Z6C2
Z6A8
GDZJ 6.8
B
C
A
5
3.5
2
5
20
0.5
150
Z6B8
Z6C8
Z7A5
GDZJ 7.5
B
C
A
5
4.0
0.5
5
20
0.5
120
Z7B5
Z7C5
Z8A2
GDZJ 8.2
B
C
A
5
5.0
0.5
5
20
0.5
120
Z8B2
Z8C2
Z9A1
GDZJ 9.1
B
C
A
B
C
D
A
5
6.0
0.5
5
25
0.5
120
Z9B1
Z9C1
Z10A
Z10B
Z10C
Z11D
Z11A
GDZJ 10
5
7.0
0.2
5
30
0.5
120
GDZJ 11
B
C
5
8.0
0.2
5
30
0.5
120
Z11B
Z11C
Part Number
GDZJ 12
C LA S S
A
B
C
A
V
Z
@ I
ZT
M i n. V
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
40.00
44.00
48.00
53.00
M a x. V
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
45.00
49.00
54.00
60.00
IZ
(m A )
5
VR
(V )
9.0
IR ( u A )
MA X
0.2
Iz t
(mA )
5
Z
ZT
(Ω)
MA X
30
Iz k
(mA )
0.5
Z
ZK
(Ω)
MA X
110
M
A RK ING
C
OD E
Z12A
Z12B
Z12C
Z13A
GDZJ 13
B
C
A
5
10
0.2
5
35
0.5
110
Z13B
Z13C
Z15A
GDZJ 15
B
C
A
5
11
0.2
5
40
0.5
110
Z15B
Z15C
Z16A
GDZJ 16
B
C
A
5
12
0.2
5
40
0.5
150
Z16B
Z16C
Z18A
GDZJ 18
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
5
13
0.2
5
45
0.5
150
Z18B
Z18C
Z20A
Z20B
Z20C
Z20D
Z22A
Z22B
Z22C
Z22D
Z24A
Z24B
Z24C
Z24D
Z27A
Z27B
Z27C
Z27D
Z30A
Z30B
Z30C
Z30D
Z33A
Z33B
Z33C
Z33D
Z36A
Z36B
Z36C
Z36D
Z39A
Z39B
Z39C
Z39D
Z41
Z43
Z47
Z51
GDZJ 20
5
15
0.2
5
55
0.5
200
GDZJ 22
5
17
0.2
5
30
0.5
200
GDZJ 24
5
19
0.2
5
35
0.5
200
GDZJ 27
5
21
0.2
5
45
0.5
250
GDZJ 30
5
23
0.2
5
55
0.5
250
GDZJ 33
5
25
0.2
5
65
0.5
250
GDZJ 36
5
27
0.2
5
75
0.5
250
GDZJ 39
5
30
0.2
5
85
0.5
250
GDZJ 43
GDZJ 47
GDZJ 51
GDZJ 56
5
5
5
5
33
36
39
43
0.2
0.2
0.2
0.2
5
5
5
5
90
90
110
110
--
--
--
--
--
--
--
--
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
400
1.2
1.1
1.0
0.9
0.8
–60
TK
VZ
=10 x 10
–4
/K
300
l
l
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
0
–2 x 10
–4
/K
–4 x 10
–4
/K
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
0
60
120
180
240
T
j
– Junction Temperature (°C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
200
15
10
5
I
Z
=5mA
0
100
0
–5
0
10
20
30
40
0
40
80
120
160
200
50
T
amb
– Ambient T
emperature(°C )
V
Z
– Z-Voltage ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
200
V
Z
–VoltageChange mV )
(
T
j
=25°C
100
150
V
R
=2V
T
j
=25°C
100
I
Z
=5mA
10
50
1
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
0
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 6 Diode Capacitance vs. Z-Voltage
100
I
F
– Forward Current ( mA)
50
40
30
20
10
0
P
tot
=500mW
T
amb
=25°C
T
j
=25°C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
V
F
– Forward Voltage ( V )
I
Z
– Z-Current ( mA)
10
15
20
25
30
35
V
Z
– Z-Voltage ( V )
Fig. 7 Forward Current vs. Forward Voltage
Fig. 9 Z-Current vs. Z-Voltage
I
Z
– Z-Current ( mA)
80
60
40
20
0
0
4
8
12
r
Z
– Differential Z-Resistance (
Ω
)
100
1000
P
tot
=500mW
T
amb
=25°C
I
Z
=1mA
100
5mA
10
10mA
1
T
j
=25°C
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
16
20
V
Z
– Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
Z
thp
–ThermalResistance PulseCond.(K/W)
for
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
R
thJA
=300K/W
T=T
jmax
–T
amb
t
p
/T=0.01
t
p
/T=0.02
t
p
/T=0.05
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x
T/Z
thp
)
1/2
)/(2r
zj
)
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
Fig. 11 Thermal Response
Microchip MCU
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