IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
Package 'FF' (marked I_ _ _ FF)
'X' SPECIFICATION APPROVALS
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ILD*X, ILQ*X part numbers
VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
IL*X part numbers VDE 0884 pending
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IL1
IL2
IL5
IL74
2.54
7.0
6.0
1.2
7.62
6.62
1
2
3
Dimensions in mm
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
EN60950 pending
ILD1
ILD2
ILD5
ILD74
3.0
0.5
2.54
3.35
DESCRIPTION
The IL*, ILD*, ILQ* series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Three package types
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High Current Transfer Ratio (50% min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
1
7.0
6.0
1.2
10.16
9.16
4.0
3.0
0.5
3.0
0.5
3.35
0.26
1
2
3
2.54
4
5
7.0
6.0
1.2
20.32
19.32
4.0
3.0
0.5
3.0
0.5 3.35
0.26
6
7
8
7.62
2
3
4
7.62
8
7
6
5
13°
Max
16
15
14
13
12
11
10
9
ILQ1
ILQ2
ILQ5
ILQ74
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91088M-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN TYP MAX UNITS
1.2
6
10
1.65
V
V
µ
A
V
V
V
nA
%
%
%
%
%
%
%
%
V
RMS
V
PK
Ω
µ
µ
s
TEST CONDITION
I
F
= 50mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
( Note 2 )
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
,
10mA I
F
,
10mA I
F
,
16mA I
F
,
10V V
CE
10V V
CE
10V V
CE
5V V
CE
50mA
6V
70mW
70V
50V
6V
150mW
Output
Coupled
Collector-emitter Breakdown (BV
CEO
)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
70
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1
20
IL2, ILD2, ILQ2
100
IL5, ILD5, ILQ5
50
IL74, ILD74, ILQ74
12.5
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1
IL2, ILD2, ILQ2
IL5, ILD5, ILQ5
IL74, ILD74, ILQ74
12.5
Input to Output Isolation Voltage V
ISO
5300
Input to Output Isolation Voltage V
ISO
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time
Output Fall Time tf
50
300
500
400
75
170
100
2.6
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
10mA I
F
, 0.4V V
CE
16mA I
F
, 0.5V V
CE
See note 1
See note 1
V = 500V (note 1)
I
F
V = 5V, R
L
Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB91088M-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
1.5
150
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
I
F
= 10mA
V
CE
= 0.4V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
2
5
10
20
50
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Forward Current
1.4
Relative current transfer ratio
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
V
CE
= 10V
T
A
= 25°C
V
CE
= 0.4V
T
A
= 25°C
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
10
20
50
Forward current I
F
(mA)
DB91088M-AAS/A3
嵌入式系统
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