Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
参数名称 | 属性值 |
厂商名称 | SIEMENS |
包装说明 | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 21.364 |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 50 V |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 70 |
JESD-30 代码 | R-PDSO-G6 |
元件数量 | 2 |
端子数量 | 6 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | NPN |
功耗环境最大值 | 0.25 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 170 MHz |
VCEsat-Max | 0.3 V |
Base Number Matches | 1 |
BCR108S-E6433 | BCR108S-E6327 | |
---|---|---|
描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon |
厂商名称 | SIEMENS | SIEMENS |
包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | unknown | unknown |
ECCN代码 | EAR99 | EAR99 |
其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 21.364 | BUILT IN BIAS RESISTANCE RATIO IS 21.364 |
最大集电极电流 (IC) | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 50 V | 50 V |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 70 | 70 |
JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 |
元件数量 | 2 | 2 |
端子数量 | 6 | 6 |
最高工作温度 | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN |
功耗环境最大值 | 0.25 W | 0.25 W |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | YES | YES |
端子形式 | GULL WING | GULL WING |
端子位置 | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON |
标称过渡频率 (fT) | 170 MHz | 170 MHz |
VCEsat-Max | 0.3 V | 0.3 V |
Base Number Matches | 1 | 1 |
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