Philips Semiconductors
Product specification
Double ESD protection diode
FEATURES
•
Uni-directional ESD protection of 2-lines or bi-directional
ESD protection of 1-line
•
Low leakage current
•
IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
APPLICATIONS
•
Cellular handset and accessories
•
Portable electronics
•
Computers and peripherals
•
Communication systems
•
Audio and video equipment
•
RS232 I/O protection.
MARKING
TYPE NUMBER
PESD5V2S2UT
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
MARKING CODE
%U1
%U2
%U3
%U4
Top view
handbook, halfpage
2
PESDxS2UT series
DESCRIPTION
ESD protection device designed to protect up to two
transmission or data lines from the damage caused by
ElectroStatic Discharge (ESD).
PINNING
PIN
1
2
3
cathode 1
cathode 2
common anode
DESCRIPTION
1
2
1
3
3
MAM467
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
T
stg
T
j
PARAMETER
storage temperature
junction temperature
electrostatic discharge voltage
IEC 61000-4-2 (contact discharge)
HBM MIL-Std 883
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a FR4 printed circuit-board.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
CONDITIONS
one diode loaded; note 1
one diode loaded; note 1
VALUE
500
330
UNIT
K/W
K/W
>15 kV (air); >8 kV (contact)
>4 kV
CONDITIONS
MIN.
−65
−65
30
10
MAX.
+150
+150
−
−
UNIT
°C
°C
kV
kV
2003 May 15
2
Philips Semiconductors
Product specification
Double ESD protection diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
RWM
PARAMETER
forward voltage
reverse stand-off voltage
PESD5V2S2UT
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
V
BR
breakdown voltage
PESD5V2S2UT
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
R
d
differential resistance
PESD5V2S2UT
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
C
d
diode capacitance
PESD5V2S2UT
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
I
R
= 1 mA
I
R
= 1 mA
I
R
= 1 mA
I
R
= 0.5 mA
f = 1 MHz; V
R
= 0
−
−
−
−
−
−
−
−
I
Z
= 1 mA
6.1
14.2
17.0
25.0
CONDITIONS
I
F
= 100 mA
I
RM
= 1
µA
−
−
−
−
−
MIN.
PESDxS2UT series
TYP.
−
−
−
−
−
6.8
15.0
18.0
27.0
−
−
−
−
−
−
−
−
MAX.
1.1
5.25
12
15
24
7.2
15.8
19.0
30.0
80
200
225
300
200
75
70
50
UNIT
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
Ω
pF
pF
pF
pF
2003 May 15
3
Philips Semiconductors
Product specification
Double ESD protection diode
PESDxS2UT series
handbook, full pagewidth
ESD TESTER
RZ
CZ
450
Ω
RG 223/U
50
Ω
coax
10×
ATTENUATOR
note 1
DIGITIZING
OSCILLOSCOPE
50
Ω
IEC1000-4-2 network
CZ = 150 pF; RZ = 330
Ω
Note 1: attenuator is only used for open
socket high voltage measurements
1/2 PESDxS2UT
vertical scale = 200 V/Div
horizontal scale = 50 ns/Div
vertical scale = 5 V/Div
horizontal scale = 50 ns/Div
GND
unclamped
+1
kV ESD voltage waveform
(IEC1000-4-2 network)
clamped
+1
kV ESD voltage waveform
(IEC1000-4-2 network)
GND
vertical scale = 200 V/Div
horizontal scale = 50 ns/Div
unclamped
−1
kV ESD voltage waveform
(IEC1000-4-2 network)
vertical scale = 5 V/Div
horizontal scale = 50 ns/Div
clamped
−1
kV ESD voltage waveform
(IEC1000-4-2 network)
MHC511
Fig.1 ESD clamping test set-up and waveforms.
2003 May 15
4
Philips Semiconductors
Product specification
Double ESD protection diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PESDxS2UT series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 May 15
5
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