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AS7C331MNTD18A-133TQIN: 产品描述ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100; 产品类别存储存储; 文件大小424KB，共18页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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AS7C331MNTD18A-133TQIN概述

ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100

AS7C331MNTD18A-133TQIN规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
零件包装代码	QFP
包装说明	LQFP,
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.8 ns
其他特性	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100
JESD-609代码	e3
长度	20 mm
内存密度	18874368 bit
内存集成电路类型	ZBT SRAM
内存宽度	18
功能数量	1
端子数量	100
字数	1048576 words
字数代码	1000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX18
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	245
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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December 2004

AS7C331MNTD18A

3.3V 1M x 18 Pipelined SRAM with NTD

Features

•

Organization: 1,048,576 words × 18 bits

NTD

™

architecture for efficient bus operation

Fast clock speeds to 166 MHz

Fast clock to data access: 3.4/3.8 ns

Fast OE access time: 3.4/3.8 ns

Fully synchronous operation

Asynchronous output enable control

Available in 100-pin TQFP package

•

Individual byte write and global write

Clock enable for operation hold

Multiple chip enables for easy expansion

3.3V core power supply

2.5V or 3.3V I/O operation with separate V

DDQ

Self-timed write cycles

Interleaved or linear burst modes

Snooze mode for standby operation

Logic block diagram

A[19:0]

Address

burst logic

CLK

CE0

CE1

CE2

R/W

BWa

BWb

ADV / LD

LBO

CLK

Write delay

addr. registers

CLK

Control

logic

CLK

Write Buffer

1M x 18

SRAM

array

DQ [a,b]

Data

input

CLK

CEN

CLK

Output

DQ [a,b]

Selection guide

-166

Minimum cycle time

Maximum clock frequency

Maximum clock access time

Maximum operating current

Maximum standby current

Maximum CMOS standby current (DC)

166

3.4

290

-133

7.5

133

3.8

270

Units

MHz

12/24/04, v 2.7

Alliance Semiconductor

P. 1 of 18

AS7C331MNTD18A-133TQIN相似产品对比

	AS7C331MNTD18A-133TQIN	AS7C331MNTD18A-133TQC	AS7C331MNTD18A-133TQCN	AS7C331MNTD18A-166TQC	AS7C331MNTD18A-166TQCN	AS7C331MNTD18A-166TQI	AS7C331MNTD18A-133TQI	AS7C331MNTD18A-166TQIN
描述	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100
是否无铅	不含铅	含铅	不含铅	含铅	不含铅	含铅	含铅	不含铅
是否Rohs认证	符合	不符合	符合	不符合	符合	不符合	不符合	符合
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,
针数	100	100	100	100	100	100	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compli	compli
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.8 ns	3.8 ns	3.8 ns	3.4 ns	3.4 ns	3.4 ns	3.8 ns	3.4 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609代码	e3	e0	e3	e0	e3	e0	e0	e3
长度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bi	18874368 bi
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	18	18	18	18	18	18	18	18
功能数量	1	1	1	1	1	1	1	1
端子数量	100	100	100	100	100	100	100	100
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C	85 °C	85 °C
组织	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18	1MX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	245	NOT SPECIFIED	245	NOT SPECIFIED	245	NOT SPECIFIED	NOT SPECIFIED	245
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	MATTE TIN	TIN LEAD	MATTE TIN	TIN LEAD	MATTE TIN	TIN LEAD	TIN LEAD	MATTE TIN
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	30	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED	30
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
厂商名称	-	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

AS7C331MNTD18A-133TQIN

AS7C331MNTD18A-133TQIN概述

AS7C331MNTD18A-133TQIN规格参数

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