DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847; BC848
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 23
2002 Feb 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.
handbook, halfpage
BC846; BC847; BC848
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BC846
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
MARKING CODE
(1)
1D*
1A*
1B*
1H*
1E*
1F*
1G*
1K*
Fig.1
Simplified outline (SOT23) and symbol.
Top view
1
2
1
2
MAM255
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC846
BC847
BC848
V
CEO
collector-emitter voltage
BC846
BC847
BC848
V
EBO
emitter-base voltage
BC846; BC847
BC848
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC846; BC847; BC848
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
80
50
30
65
45
30
6
5
100
200
200
250
+150
150
+150
V
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
DC current gain
BC846
BC847
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
I
C
= 2 mA; V
CE
= 5 V
V
EB
= 5 V; I
C
= 0
I
C
= 10
µA;
V
CE
= 5 V
BC846; BC847; BC848
MIN.
−
−
−
−
−
−
110
110
110
200
420
−
−
−
−
580
−
−
100
−
TYP.
−
−
−
90
150
270
−
−
180
290
520
90
200
700
900
660
−
2.5
−
2
MAX.
15
5
100
−
−
−
450
800
220
450
800
250
600
−
−
700
770
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
handbook, halfpage
400
MGT723
hFE
(1)
1200
handbook, halfpage
VBE
(mV)
1000
(1)
MGT724
300
800
(2)
200
(2)
600
(3)
(3)
400
100
200
0
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
BC846A;
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC846A;
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
MGT725
handbook, halfpage
1200
VBEsat
(mV)
1000
MGT726
(1)
800
(2)
10
2
(1)
(2)
(3)
600
(3)
400
200
10
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
BC846A;
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC846A;
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
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