Freescale Semiconductor
Technical Data
Document Number: MRF6P23190H
Rev. 3, 12/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1900 mA,
P
out
= 40 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P23190HR6
2300 - 2400 MHz, 40 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
CW
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
250
1.3
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
Symbol
R
θJC
Value
(2,3)
0.22
0.24
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MRF6P23190HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1900 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 40 W Avg., f = 2390 MHz, 2 - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in
3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
G
ps
η
D
IM3
ACPR
IRL
13
22
—
—
—
14
23.5
- 37.5
- 41
- 13
16
—
- 35
- 38
—
dB
%
dBc
dBc
dB
MRF6P23190HR6
2
RF Device Data
Freescale Semiconductor
+
R1
V
BIAS
+
C12
+
C11
C10
C9
B2
Z3
RF
INPUT
Z1
Z2
Z4
C2
Z16
Z14
C4
R2
V
BIAS
+
C16
+
C15
C14
C13
B4
C8
C22
C23
C24
C25 C26
C6
+
C28
B3
Z20
Z18
Z22
Z24
C1
DUT
Z6
Z8
Z10
Z12
Z5
Z7
Z9
C5
Z13
Z11
C3
Z15
B1
Z19
Z17
Z21
Z23
C7
C17
C18
C19
C20 C21
C27
V
SUPPLY
Z25
Z26
Z27
RF
OUTPUT
Z28
V
SUPPLY
Z1, Z28
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
0.380″
0.850″
2.244″
0.186″
0.614″
0.570″
0.072″
0.078″
0.861″
0.187″
x 0.081″
x 0.135″
x 0.081″
x 0.074″
x 0.081″
x 0.282″
x 0.500″
x 0.500″
x 0.050″
x 0.782″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z17, Z18
Z19, Z20
Z21, Z22
Z23
Z24
Z25
Z26
Z27
PCB
0.321″ x 0.782″ Microstrip
0.404″ x 0.074″ Microstrip
0.918″ x 0.081″ Microstrip
0.346″ x 0.081″ Microstrip
2.103″ x 0.081″ Microstrip
0.037″ x 0.135″ Microstrip
0.250″ x 0.300″ Microstrip
0.563″ x 0.135″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6P23190HR6 Test Circuit Schematic
Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values
Part
B1, B2, B3, B4
C1, C2, C3, C4
C5, C6, C7, C8
C9, C13
C10, C14, C17, C22
C11, C15
C12, C16
C18, C19, C20, C21, C23,
C24, C25, C26
C27, C28
R1, R2
Ferrite Beads
5.1 pF Chip Capacitors
5.6 pF Chip Capacitors
0.01
μF,
100 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
22
μF,
25 V Tantalum Capacitors
47
μF,
16 V Tantalum Capacitors
10
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitors
240
Ω,
1/4 W Chip Resistors
Description
Part Number
2508051107Y0
ATC100B5R1CT500XT
ATC100B5R6CT500XT
C1825C103J1RAC
C1825C225J5RAC
T491D226K025AT
T491D476K016AT
GRM55DR61H106KA88B
NACZF331M63V
CRCW12062400FKEA
Manufacturer
Fair - Rite
ATC
ATC
Kemet
Kemet
Kemet
Kemet
Murata
Nippon
Vishay
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
3
R1
C12 C11 C10* C9*
C20 C21
B1
B2
C5
C7
C17
C18 C19
C27
C3
C1
CUT OUT AREA
C2
C4
MRF6P23190H
Rev. 3
C6
B3
B4
C8
C22
R2
C16 C15 C14* C13*
C23 C24
C25
C26
C28
*Stacked.
Figure 2. MRF6P23190HR6 Test Circuit Component Layout
MRF6P23190HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14.4
V
DD
= 28 Vdc, P
out
= 40 W (Avg.), I
DQ
= 1900 mA
14.2 2−Carrier W−CDMA, 10 MHz Carrier Spacing
G
ps
, POWER GAIN (dB)
14
13.8
13.6
13.4
13.2
13 ACPR
12.8
2270
IRL
G
ps
IM3
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
25
24
23
22
−36
−38
−40
−42
2370
2390
2410
−44
2430
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−13
−15
−16
−18
−19
−21
2290
2310
2330
2350
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 40 Watts Avg.
14
V
DD
= 28 Vdc, P
out
= 80 W (Avg.), I
DQ
= 1900 mA
13.8 2−Carrier W−CDMA, 10 MHz Carrier Spacing
G
ps
, POWER GAIN (dB)
13.6
13.4
13.2
13
12.8
12.6
ACPR
IRL
−32
2310
2330
2350
2370
2390
2410
−34
2430
G
ps
IM3
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
35
34
32
31
−26
−28
−30
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−12
−13
−15
−16
−18
−19
12.4
2270
2290
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
out
= 80 Watts Avg.
16
15
G
ps
, POWER GAIN (dB)
14
13
12
11
10
0.5
I
DQ
= 2850 mA
2375 mA
1900 mA
1425 mA
950 mA
V
DD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1
10
100
500
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
−50
−60
−70
0.5
1425 mA
2375 mA
I
DQ
= 950 mA
1900 mA
V
DD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
2850 mA
1
10
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
100
500
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P23190HR6
RF Device Data
Freescale Semiconductor
5
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