电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANTXV6172AUS

产品描述Trans Voltage Suppressor Diode, 136.8V V(RWM), Bidirectional, 1 Element, Silicon, GLASS, D-5C, 2 PIN
产品类别分立半导体    二极管   
文件大小521KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

JANTXV6172AUS概述

Trans Voltage Suppressor Diode, 136.8V V(RWM), Bidirectional, 1 Element, Silicon, GLASS, D-5C, 2 PIN

JANTXV6172AUS规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
包装说明O-LELF-R2
针数2
制造商包装代码D-5C
Reach Compliance Codeunknown
ECCN代码EAR99
最小击穿电压171 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-LELF-R2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
认证状态Not Qualified
参考标准MIL-19500/516
最大重复峰值反向电压136.8 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
1N6102US thru 1N6137AUS
and 1N6138US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
DESCRIPTION
This surface mount series of industry recognized voidless-hermetically-
sealed Bidirectional Transient Voltage Suppressor (TVS) designs is
military qualified to MIL-PRF-19500/516 and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working
Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package
sizes for 500 W and 1500 W ratings. They are very robust in hard-glass
construction and also use an internal metallurgical bond identified as
Category I for high-reliability applications. Both of these are also military
qualified to MIL-PRF-19500/516 and are available as both a non suffix part
and an “A” suffix part involving different voltage tolerances as further
described in note 4 on page 2. These devices are also available in axial-
leaded packages for thru-hole mounting by deleting the “US” suffix (see
separate data sheet for 1N6102 thru 1N6173A). Microsemi also offers
numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
APPEARANCE
Package “E”
(or “D-5B”)
WWW .
Microsemi
.C
OM
Package “G”
(or “D-5C”)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
I”
metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-PRF-
19500/516 by adding JAN, JANTX, or JANTXV prefix
(consult factory for 1N6102US and 1N6138US)
JANS available for 1N6103AUS thru 1N6118AUS per
MIL-PRF-19500/516 as well as further options for
screening in accordance with MIL-PRF-19500 for JANS
on all others in this series by using a “MSP” prefix, e.g.
MSP6119AUS, MSP6143AUS, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6102 thru 1N6173)
APPLICATIONS / BENEFITS
Military and other high reliability transient protection
Extremely robust construction
Extensive range in Working Peak “Standoff”
Voltage (V
WM
) from 5.2 to 152 V
Available as either 500 W or 1500 W Peak Pulse
Power (P
PP
) using two different size packages
ESD and EFT protection per IEC6100-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy placement
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Operating (T
J
) & Storage Temperature: -55
o
C to +175
o
C
o
Tungsten slugs
Peak Pulse Power (P
PP
) at 25 C: 500 W for 1N6102US to
TERMINATIONS: End caps are solid Silver (Ag)
1N6137AUS and 1500 W for 1N6138US to 1N6173AUS @
with Tin/Lead (Sn/Pb) finish
10/1000 µs (also see Figures 1,2 and 3)
MARKING: None
Impulse repetition rate (duty factor): 0.01%
POLARITY: No polarity marking for these
Steady-State Power: 3.0 W for 1N6102US to 1N6137AUS
bidirectional TVSs
and 5.0 W for 1N6138US to 1N6173AUS up to T
EC
= 150
o
C.
o
o
Linearly derate above T
EC
=150 C to zero at T
EC
=175 C.
Tape & Reel option: Standard per EIA-481-B
Steady-State Power: 2.0 W for 1N6102US to 1N6137AUS
Weight: 539 mg for 500 Watt (E Package)
and 3.0 W for 1N6138US to 1N6173AUS @ T
A
= 25
o
C (see
1100 mg for 1500 Watt (G Package)
note and Figure 4 for linear derating at higher temperatures)
See package dimensions and recommended pad
Thermal Resistance (junction to endcap): 8.3
o
C/W for
layouts on last page for both the “E” (D-5B) and “G”
1N6102US to 1N6137AUS and 5.0
o
C/W for 1N6138US to
(D-5C) size packages
1N6173AUS
Solder Temperatures: 260
o
C for 10 s (maximum)
NOTE:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
OP
or T
J(MAX)
is not exceeded
Copyright
2004
1-05-2005 REV B
1N6102US – 1N6137AUS
1N6138US – 1N6173AUS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
在PCB上创建属于你自己的专属二维码
本帖最后由 huaiqiao 于 2016-5-23 19:03 编辑 1、首先前两天回过个帖子,关于怎么在pcb中添加logo的。(详见4楼的回复,插件也在4楼附件) https://bbs.eeworld.com.cn/thread-490306-1-1.ht ......
huaiqiao PCB设计
EVC4中的SDK关联问题
我在PB5中build SDK成功后,安装了该SDK,但是在EVC4中点击SET ACTIVE PLATFORM关联SDK的时候,找不到该SDK,请问这个问题要怎么解决?我已经重装过EVC4,也安装了EVC4SP4,电脑也重启过,SDK也 ......
jqyan14 嵌入式系统
刚刚学画PCB,大虾们给点意见,谢谢
刚刚学画PCB,大虾们给点意见,谢谢 板子尺寸大了点,这是人家要求的,我也没办法。。。 4YTI8ZVM[@BA)YE$L@3MAF7.jpg (165.14 KB) 下载次数:77 2011-2-27 17 ......
putian stm32/stm8
请教:关于F449的液晶端口S的问题
现在采用F449做一个手持采集仪器,采用总线接口的320x240(16RGB)的液晶屏作为显示,一个初步的想法是可以采用Px口来模拟总线行为,但是F449带有液晶接口,不知道S0~S31是否可以用来做IO口使来 ......
xumeng19821029 微控制器 MCU
一体成型电感与普通的功率电感CDXXX电感的区别??
不考虑价格因素 ,一体成型电感 可以将容量和峰值电流等做的很大,体积却很小,在DC-DC电源这种应用中是否可以取代普通的功率电感。这两种电感有何区别? 感激涕零!...
shirl 电源技术
功耗优化型 77GHz 液位变送器参考设计
本帖最后由 Jacktang 于 2019-4-19 08:30 编辑 TIDEP-0091突出了IWR14xx 76-至81-GHz mmWave传感器功率优化策略,适用于油箱液位探测应用,位移传感器,4至20 mA传感器以及其他低功率 ......
Jacktang 模拟与混合信号

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 846  1528  1733  851  634  52  32  41  55  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved