Freescale Semiconductor
Technical Data
Document Number: MRF6V4300N
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
•
Typical CW Performance: V
DD
= 50 Volts, I
DQ
= 900 mA, P
out
= 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V4300NR1
MRF6V4300NBR1
10-
-600 MHz, 300 W, 50 V
LATERAL N-
-CHANNEL
SINGLE-
-ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6V4300NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE-
-ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Figure 1. Pin Connections
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol
R
θJC
Value
(1,2)
0.24
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 150 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
2.8
105
304
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.9
—
1.65
2.7
0.25
2.4
3.4
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
50
2.5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 900 mA, P
out
= 300 W, f = 450 MHz, CW
G
ps
η
D
IRL
20
58
—
22
60
--16
24
—
--9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
2
RF Device Data
Freescale Semiconductor
B3
V
SUPPLY
B1
V
BIAS
+
C1
C7
C4
C8
R1
L4
C13
RF
OUTPUT
L2
C9
C5
C2
C12
RF
INPUT
L1
Z5
Z6
Z7
Z8
Z9
C20 Z10
C21
C22 Z11
C25
C26 Z12
C15
Z13
Z1
C11
Z2
Z3
Z4
C19
C16
C17
C18
DUT
L5
C14
L3
C10
C6
B2
C23
C24
C27
C28
C3
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.900″ x 0.082″ Microstrip
0.115″ x 0.170″ Microstrip
0.260″ x 0.170″ Microstrip
0.380″ x 0.170″ Microstrip
0.220″ x 0.220″ Microstrip
0.290″ x 0.630″ Microstrip
0.220″ x 0.630″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.380″ x 0.220″ Microstrip
0.040″ x 0.170″ Microstrip
0.315″ x 0.170″ Microstrip
0.230″ x 0.170″ Microstrip
0.390″ x 0.170″ Microstrip
0.680″ x 0.082″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic
Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values
Part
B1
B2, B3
C1
C2, C3
C4, C5, C6, C7
C8, C9, C10
C11, C12, C13, C14, C15
C16
C17
C18
C19, C20
C21, C22, C23, C24
C25, C26, C27, C28
L1
L2, L3
L4, L5
R1
Short Ferrite Bead
Long Ferrite Beads
47
μF,
25 V, Tantalum Capacitor
22
μF,
50 V, Chip Capacitors
1
μF,
100 V, Chip Capacitors
15 nF, 100 V, Chip Capacitors
240 pF, Chip Capacitors
9.1 pF, Chip Capacitor
15 pF, Chip Capacitor
51 pF, Chip Capacitor
5.6 pF, Chip Capacitors
4.3 pF, Chip Capacitors
4.7 pF, Chip Capacitors
27 nH Inductor
47 nH Inductors
5 Turn, #18 AWG Inductors, Hand Wound
10
Ω,
1/4 W, Chip Resistor
Description
Part Number
2743019447
2743021447
T491B476M025AT
C5750JF1H226ZT
C3225JB2A105KT
C3225CH2A153JT
ATC100B241JT500XT
ATC100B9R1JT500XT
ATC100B150JT500XT
ATC100B510JT500XT
ATC100B5R6JT500XT
ATC100B4R3JT500XT
ATC100B4R7JT500XT
1812SMS--27NJLC
1812SMS--47NJLC
Copper Wire
CRCW120610R1FKEA
Vishay
Manufacturer
Fair--Rite
Fair--Rite
Kemet
TDK
TDK
TDK
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Coilcraft
Coilcraft
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
3
C1
C7
B1
C4
C8
L2
R1
C12
C13
C20
L4
C17
CUT OUT AREA
C18
ATC
B3
C2
C9 C5
L1
C11
C16
L5
C21 C22 C25 C26
C15
C19
C14
L3
C23 C24 C27 C28
MRF6V4300N/NB
Rev. 1
C10 C6
B2
C3
Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout
MRF6V4300NR1 MRF6V4300NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
C
iss
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
I
D
, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
100
100
10
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
1
1
T
C
= 25°C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
Figure 4. Capacitance versus Drain-
-Source Voltage
10
9
I
D
, DRAIN CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
2.25 V
120
18
10
2.5 V
2.63 V
2.75 V
G
ps
, POWER GAIN (dB)
V
GS
= 3 V
23
22
21
900 mA
20
19
Figure 5. DC Safe Operating Area
I
DQ
= 1350 mA
1125 mA
450 mA
650 mA
V
DD
= 50 Vdc
f = 450 MHz
100
P
out
, OUTPUT POWER (WATTS) CW
600
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
0
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
10
60
V
DD
= 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
P
out
, OUTPUT POWER (dBm)
59
58
57
56
55
54
53
52
51
100
P
out
, OUTPUT POWER (WATTS) PEP
600
50
28
Figure 7. CW Power Gain versus Output Power
Ideal
P3dB = 56.06 dBm (403 W)
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
P1dB = 55.15 dBm (327 W)
Actual
I
DQ
= 450 mA
650 mA
900 mA
1350 mA
1125 mA
V
DD
= 50 Vdc, I
DQ
= 900 mA
f = 450 MHz
29
30
31
32
33
34
35
36
37
38
P
in
, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
5
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