NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
NSBC114EDXV6T1
(6)
http://onsemi.com
(2)
R
2
(1)
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
SOT−563
CASE 463A
PLASTIC
xx M
G
1
xx = Device Code (Refer to Page 2)
M = Date Code
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation; T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation; T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Range
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
Symbol
P
D
R
qJA
Symbol
P
D
R
qJA
T
J
, T
stg
Max
357 (Note 1)
2.9 (Note 1)
350 (Note 1)
Max
500 (Note 1)
4.0 (Note 1)
250 (Note 1)
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
Device
NSBC1xxxDXV6T1
Package
Shipping
†
SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T5
SOT−563* 8000/Tape & Reel
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 6
Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device†
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1 (Note 2)
NSBC143TDXV6T1 (Notes 2)
NSBC113EDXV6T1 (Note 2)
NSBC123EDXV6T1 (Notes 2)
NSBC143EDXV6T1 (Notes 2)
NSBC143ZDXV6T1 (Notes 2)
NSBC124XDXV6T1 (Notes 2)
NSBC123JDXV6T1 (Note 2)
NSBC115EDXV6T1 (Notes 2)
NSBC144WDXV6T1 (Notes 2)
Package*
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
7N
7P
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
http://onsemi.com
2
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
−
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
NSBC113EDXV6T1/NSBC123EDXV6T1
(I
C
= 10 mA, I
B
= 5 mA)
(I
C
= 10 mA, I
B
= 1 mA)
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144EDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
NSBC113EDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Vdc
Input Resistor
k
W
Resistor Ratio
NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
R1/R2
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
http://onsemi.com
3
NSBC114EDXV6T1, NSBC114EDXV6T5
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
qJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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4
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
0.01
0.001
hFE , DC CURRENT GAIN (NORMALIZED)
50
100
0
20
40
I
C
, COLLECTOR CURRENT (mA)
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
10
1
0.1
0.01
25°C
T
A
= −25°C
C ob, CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
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