BGA2716
MMIC wideband amplifier
Rev. 3 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 23 dB gain (1 dB up to 2.7 GHz)
9 dBm output power at 1 dB compression point
Good linearity for low current (IP3
out
= 22 dBm)
Low second harmonic;
38
dBc at P
L
=
5
dBm
Unconditionally stable (K
1.2).
1.3 Applications
LNB IF amplifiers
Cable systems
ISM
General purpose.
1.4 Quick reference data
Table 1.
Symbol
V
S
I
S
s
21
2
NF
P
L(sat)
Quick reference data
Parameter
DC supply voltage
supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
Conditions
Min
-
-
-
-
-
Typ
5
15.9
22.9
5.3
11.6
Max
6
-
-
-
-
Unit
V
mA
dB
dB
dBm
NXP Semiconductors
BGA2716
MMIC wideband amplifier
2. Pinning information
Table 2.
Pin
1
2, 5
3
4
6
Pinning
Description
V
S
GND2
RF_OUT
GND1
RF_IN
1
2
3
4
2, 5
sym052
Simplified outline
6
5
4
Symbol
1
6
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BGA2716
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BGA2716
Marking
Marking code
B7-
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
S
I
S
P
tot
T
stg
T
j
P
D
Parameter
DC supply voltage
supply current
total power dissipation
storage temperature
junction temperature
maximum drive power
T
sp
90
C
Conditions
RF input AC
coupled
Min
-
-
-
65
-
-
Max
6
30
200
+150
150
10
Unit
V
mA
mW
C
C
dBm
BGA2716
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 September 2011
2 of 15
NXP Semiconductors
BGA2716
MMIC wideband amplifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
P
tot
= 200 mW;
T
sp
90
C
Typ
300
Unit
K/W
7. Characteristics
Table 7.
Characteristics
V
S
= 5 V; I
S
= 15.9 mA; T
j
= 25
C; measured on demo board; unless otherwise specified.
Symbol
I
S
s
21
2
Parameter
supply current
insertion power
gain
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
s
11
2
s
22
2
s
12
2
NF
B
K
P
L(sat)
P
L(1dB)
input return
losses
output return
losses
isolation
noise figure
bandwidth
stability factor
saturated load
power
load power
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at
s
21
2
3
dB below flat
gain at 1 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression;
f = 1 GHz
at 1 dB gain compression;
f = 2.2 GHz
IM2
second order
at P
L
=
5
dBm;
intermodulation f
0
= 1 GHz
product
input, third
order intercept
point
output, third
order intercept
point
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
Conditions
Min
13
21
22
22
21
20
19
15
10
10
9
30
33
-
-
3
-
-
10
6
8
5
36
Typ
15.9
22.1
22.9
23.1
22.8
22.1
20.8
17
12
12
11
31
35
5.3
5.5
3.2
1.4
1.9
11.6
7.5
8.9
6.1
38
Max
21
23
24
25
24
24
22
-
-
-
-
-
-
5.4
5.6
-
-
-
-
-
-
-
-
dBm
dBm
dBm
dBm
dBc
Unit
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
IP3
in
2
8
21
15
0.7
6.9
22.2
15.9
-
-
-
-
dBm
dBm
dBm
dBm
IP3
out
BGA2716
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 September 2011
3 of 15
NXP Semiconductors
BGA2716
MMIC wideband amplifier
8. Application information
Figure 1
shows a typical application circuit for the BGA2716 MMIC. The device is
internally matched to 50
,
and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.
Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.
The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
V
S
C1
V
S
C2
L1
C3
RF input
RF_IN
RF_OUT
RF output
GND1
GND2
mgu436
Fig 1.
Typical application circuit.
Figure 2
shows the PCB layout, used for the standard demonstration board.
BGA2716
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 September 2011
4 of 15
NXP Semiconductors
BGA2716
MMIC wideband amplifier
30 mm
PH
30 mm
PHILIPS
IN
OUT
V
+
PH
DUT
C2
C3
PHILIPS
IN
L1
C1
OUT
V
+
001aab256
Material = FR4; thickness = 0.6 mm,
r
= 4.6.
Fig 2.
PCB layout and demonstration board showing components.
8.1 Application examples
The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (see
Figure 3).
BGA2716
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 8 September 2011
5 of 15
PCB设计
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