电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

7208L25PI

产品描述FIFO, 64KX9, 25ns, Asynchronous, CMOS, PDIP28, PLASTIC, DIP-28
产品类别存储    存储   
文件大小211KB,共14页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

7208L25PI概述

FIFO, 64KX9, 25ns, Asynchronous, CMOS, PDIP28, PLASTIC, DIP-28

7208L25PI规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DIP
包装说明PLASTIC, DIP-28
针数28
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间25 ns
最大时钟频率 (fCLK)28.5 MHz
周期时间35 ns
JESD-30 代码R-PDIP-T28
JESD-609代码e0
长度36.576 mm
内存密度589824 bit
内存集成电路类型OTHER FIFO
内存宽度9
湿度敏感等级1
功能数量1
端子数量28
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64KX9
可输出NO
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP18,.3
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源5 V
认证状态Not Qualified
座面最大高度4.699 mm
最大待机电流0.012 A
最大压摆率0.12 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度15.24 mm
Base Number Matches1

文档预览

下载PDF文档
CMOS ASYNCHRONOUS FIFO
2,048 x 9, 4,096 x 9
8,192 x 9, 16,384 x 9
32,768 x 9, 65,536 x 9
IDT7203
IDT7204
IDT7205
IDT7206
IDT7207
IDT7208
FEATURES:
First-In/First-Out Dual-Port memory
2,048 x 9 organization (IDT7203)
4,096 x 9 organization (IDT7204)
8,192 x 9 organization (IDT7205)
16,384 x 9 organization (IDT7206)
32,768 x 9 organization (IDT7207)
65,636 x 9 organization (IDT7208)
High-speed: 12ns access time
Low power consumption
— Active: 660mW (max.)
— Power-down: 44mW (max.)
Asynchronous and simultaneous read and write
Fully expandable in both word depth and width
Pin and functionally compatible with IDT720X family
Status Flags: Empty, Half-Full, Full
Retransmit capability
High-performance CMOS technology
Military product compliant to MIL-STD-883, Class B
Standard Military Drawing for #5962-88669 (IDT7203), 5962-89567
(IDT7203), and 5962-89568 (IDT7204) are listed on this function
Industrial temperature range (–40°C to +85°C) is available
(plastic packages only)
DESCRIPTION:
The IDT7203/7204/7205/7206/7207/7208 are dual-port memory buffers
with internal pointers that load and empty data on a first-in/first-out basis. The
device uses Full and Empty flags to prevent data overflow and underflow and
expansion logic to allow for unlimited expansion capability in both word size and
depth.
Data is toggled in and out of the device through the use of the Write (W) and
Read (R) pins.
The device's 9-bit width provides a bit for a control or parity at the user’s
option. It also features a Retransmit (RT) capability that allows the read pointer
to be reset to its initial position when
RT
is pulsed LOW. A Half-Full Flag is
available in the single device and width expansion modes.
These FIFOs are fabricated using IDT’s high-speed CMOS technology.
They are designed for applications requiring asynchronous and simultaneous
read/writes in multiprocessing, rate buffering and other applications.
Military grade product is manufactured in compliance with the latest revision
of MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(D
0
-D
8
)
W
WRITE
CONTROL
RAM ARRAY
WRITE
POINTER
2,048 x 9
4,096 x 9
8,192 x 9
16,384 x 9
32,768 x 9
65,536 x 9
READ
POINTER
THREE-
STATE
BUFFERS
R
READ
CONTROL
FLAG
LOGIC
DATA OUTPUTS
(Q
0
-Q
8
)
RS
RESET
LOGIC
FL/RT
EF
FF
XI
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
EXPANSION
LOGIC
XO/HF
2661 drw01
COMMERCIAL, MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
©
2001 Integrated Device Technology, Inc.
MAY 2001
DSC-2661/12

7208L25PI相似产品对比

7208L25PI IDT7208L25PGI 7208L25PGI
描述 FIFO, 64KX9, 25ns, Asynchronous, CMOS, PDIP28, PLASTIC, DIP-28 FIFO, 64KX9, 25ns, Asynchronous, CMOS, PDIP28, PLASTIC, DIP-28 FIFO, 64KX9, 25ns, Asynchronous, CMOS, PDIP28, PLASTIC, DIP-28
是否Rohs认证 不符合 符合 符合
零件包装代码 DIP DIP DIP
包装说明 PLASTIC, DIP-28 DIP, DIP,
针数 28 28 28
Reach Compliance Code not_compliant compli compliant
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 25 ns 25 ns 25 ns
周期时间 35 ns 35 ns 35 ns
JESD-30 代码 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28
JESD-609代码 e0 e3 e3
长度 36.576 mm 36.576 mm 36.576 mm
内存密度 589824 bit 589824 bi 589824 bit
内存宽度 9 9 9
功能数量 1 1 1
端子数量 28 28 28
字数 65536 words 65536 words 65536 words
字数代码 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 64KX9 64KX9 64KX9
可输出 NO NO NO
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 260 260
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 4.699 mm 4.699 mm 4.699 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 NO NO NO
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn85Pb15) MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30
宽度 15.24 mm 15.24 mm 15.24 mm
Base Number Matches 1 1 1
是否无铅 - 不含铅 不含铅

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 891  2204  62  1193  1188  38  36  58  14  31 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved