Dual-Port SRAM, 2KX8, 45ns, CMOS, CDIP48, CERAMIC, DIP-48
参数名称 | 属性值 |
零件包装代码 | DIP |
包装说明 | DIP, DIP48,.6 |
针数 | 48 |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 45 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-GDIP-T48 |
内存密度 | 16384 bit |
内存集成电路类型 | DUAL-PORT SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端口数量 | 2 |
端子数量 | 48 |
字数 | 2048 words |
字数代码 | 2000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 2KX8 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装等效代码 | DIP48,.6 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
电源 | 5 V |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 |
最大待机电流 | 0.015 A |
最小待机电流 | 4.5 V |
最大压摆率 | 0.12 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
Base Number Matches | 1 |
5962-9062005MYX | 5962-9062001MYX | 5962-9062006MYX | 5962-9062011MXX | 5962-9062009MXX | 5962-9062008MXX | 5962-9062012MXX | 5962-9062007MXX | 5962-9062004MYX | |
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描述 | Dual-Port SRAM, 2KX8, 45ns, CMOS, CDIP48, CERAMIC, DIP-48 | Dual-Port SRAM, 2KX8, 55ns, CMOS, CDIP48, CERAMIC, DIP-48 | Dual-Port SRAM, 2KX8, 35ns, CMOS, CDIP48, CERAMIC, DIP-48 | Dual-Port SRAM, 2KX8, 45ns, CMOS, CQCC52, CERAMIC, LCC-52 | Dual-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, CERAMIC, LCC-52 | Dual-Port SRAM, 2KX8, 45ns, CMOS, CQCC52, CERAMIC, LCC-52 | Dual-Port SRAM, 2KX8, 35ns, CMOS, CQCC52, CERAMIC, LCC-52 | Dual-Port SRAM, 2KX8, 55ns, CMOS, CQCC52, CERAMIC, LCC-52 | Dual-Port SRAM, 2KX8, 55ns, CMOS, CDIP48, CERAMIC, DIP-48 |
零件包装代码 | DIP | DIP | DIP | LCC | LCC | LCC | LCC | LCC | DIP |
包装说明 | DIP, DIP48,.6 | DIP, DIP48,.6 | DIP, DIP48,.6 | QCCN, | QCCN, LCC52,.75SQ | QCCN, | QCCN, | QCCN, LCC52,.75SQ | DIP, DIP48,.6 |
针数 | 48 | 48 | 48 | 52 | 52 | 52 | 52 | 52 | 48 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
最长访问时间 | 45 ns | 55 ns | 35 ns | 45 ns | 35 ns | 45 ns | 35 ns | 55 ns | 55 ns |
JESD-30 代码 | R-GDIP-T48 | R-GDIP-T48 | R-GDIP-T48 | S-CQCC-N52 | S-CQCC-N52 | S-CQCC-N52 | S-CQCC-N52 | S-CQCC-N52 | R-GDIP-T48 |
内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 48 | 48 | 48 | 52 | 52 | 52 | 52 | 52 | 48 |
字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
封装代码 | DIP | DIP | DIP | QCCN | QCCN | QCCN | QCCN | QCCN | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | YES | YES | YES | YES | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | QUAD | QUAD | QUAD | DUAL |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
I/O 类型 | COMMON | COMMON | COMMON | - | COMMON | - | - | COMMON | COMMON |
端口数量 | 2 | 2 | 2 | - | 2 | - | - | 2 | 2 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | - | - | 3-STATE | 3-STATE |
封装等效代码 | DIP48,.6 | DIP48,.6 | DIP48,.6 | - | LCC52,.75SQ | - | - | LCC52,.75SQ | DIP48,.6 |
电源 | 5 V | 5 V | 5 V | - | 5 V | - | - | 5 V | 5 V |
最大待机电流 | 0.015 A | 0.015 A | 0.015 A | - | 0.015 A | - | - | 0.015 A | 0.015 A |
最小待机电流 | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | - | - | 4.5 V | 4.5 V |
最大压摆率 | 0.12 mA | 0.12 mA | 0.17 mA | - | 0.17 mA | - | - | 0.12 mA | 0.12 mA |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | - | 1.27 mm | - | - | 1.27 mm | 2.54 mm |
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