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30KPA120CAE3

产品描述Trans Voltage Suppressor Diode, 30000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, P600, 2 PIN
产品类别分立半导体    二极管   
文件大小477KB,共8页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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30KPA120CAE3概述

Trans Voltage Suppressor Diode, 30000W, 120V V(RWM), Bidirectional, 1 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, P600, 2 PIN

30KPA120CAE3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Microsemi
包装说明O-PALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压146.8 V
最小击穿电压134 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散30000 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散8 W
最大重复峰值反向电压120 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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30KPA28Ae3 – 30KPA288CAe3
Compliant
30,000 Watt Transient Voltage Suppressor
(TVS) Protection Device
DESCRIPTION
This device clamps dangerous high-voltage short-term transients such as those produced by
the secondary effects of lightning strikes, providing circuit protection to several class levels in
the IEC61000-4-5 specification. Clamping time is virtually instantaneous. It also provides
protection from transients caused by inductive load dumps, RFI, and ESD, providing protection
to IEC61000-4-2 and -4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional configurations
5% voltage tolerance
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant (2002/95/EC)
MSL level 1 (J-STD-020)
RoHS compliant
P600 Package
APPLICATIONS / BENEFITS
Protection from transients caused by lightning strikes, switching transients, RFI, and ESD.
Protection from the secondary effects of lightning per IEC61000-4-5
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
MAXIMUM RATINGS
@ 25
ºC
unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
Thermal Resistance, Junction to Ambient
Non Repetitive Peak Forward Surge Current
(1)
(8.3ms single half sine wave)
Rated Average Power Dissipation @ T
L
= 75 ºC,
(2)
(0.375 inch (9.5 mm) from body)
Peak Pulse Power Dissipation with a 10/1000 μs waveform
(see
Figure 1)
(3)
Peak Pulse Current with a 10/1000 μs waveform
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
I
FSM
P
M(AV)
P
PP
I
PP
Value
-55 to +175
8.0
77.5
400
8.0
30,000
See
Electrical
Table
260
o
Unit
o
C
C/W
C/W
A
W
W
A
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Solder Temperature @ 10 s
o
C
Notes:
1. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum
2. Mounted as shown in
Figure 5
3. Non-repetitive current pulse, per
Figure 3
and derated above T
A
= 25 ºC per
Figure 2
RF01132, Rev. B (7/26/13)
©2013 Microsemi Corporation
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