EEPROM
AS8ERLC128K32
PIN ASSIGNMENT
128K x 32 Radiation Tolerant EEPROM
AVAILABLE AS MILITARY
SPECIFICATIONS
•
MIL-PRF-38534
(Top View)
68 Lead CQFP
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
FEATURES
•
Access time of 250ns , 300ns
• Operation with single
3.3V (+ .3V)
supply
• LOW Power Dissipation:
Active(Worst case):
300mW
(MAX), Max Speed Operation
Standby(Worst case):
7.2mW(MAX),
Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MNOS cell Technology
• 10
4
Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy\ and Data Polling Signals
• Write protection by RES\ pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS*
• Shielded Package for Best Radiation Immunity
• Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct use
of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
FUNCTION
FUNCTION
Address Input
FUNCTION
Data
FUNCTION
Input/Output
Output Enable
FUNCTION
FUNCTION
Chip Enable
Write Enable
FUNCTION
Power Supply
FUNCTION
OPTIONS
• Timing
250 ns
300 ns
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
MARKINGS
-250
-300
Q
QB
SQ
SQB
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
Ground
V
SS
FUNCTION
FUNCTION
RDY/BUSY\ Ready Busy
RES\
Reset
GENERAL DESCRIPTION
The AS8ERLC128K32 is a 4 Megabit Radiation Tolerant
EEPROM Module organized as 128K x 32 bit. User configurable to
256K x16 or 512Kx 8. The module achieves high speed access, low
power consumption and high reliability by employing advanced CMOS
memory technology.
The military grade product is manufactured in compliance to MIL-
STD 883, making the AS8ERLC128K32 ideally suited for military or
space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad
fl
at pack. It has a max. height of 0.200 inch (non-shielded). This
package design is targeted for those applications which require low
profile SMT Packaging.
* Contact factory for more information. 2-sided shielding provided via Tungsten
lids on both sides. 6.5X typ. TID boost due to shielding. (Geostationary orbit)
Proven total dose 40K to 100K RADS. Micross can perform TID lot testing.
AS8ERLC128K32
Rev. 2.1 11/10
RDY/ BUSY\
RES\
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS8ERLC128K32
TRUTH TABLE
MODE
Read
Standby
Write
Deselect
Wirte Inhibit
Data\ Polling
Program Reset
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE\
V
IL
X
3
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES\
V
H
X
V
H
V
H
X
X
V
H
V
IL
2
RDY/BUSY\
High-Z
High-Z
1
I/O
Dout
High-Z
Din
High-Z
---
---
Dout (I/O7)
High-Z
V
IH
V
IH
X
V
IL
V
IL
X
High-Z to V
OL
High-Z
---
---
V
OL
High-Z
NOTES:
1. RDY/Busy\ output has only active LOW V
OL
and high impedance state. It can not go to HIGH (V
OH
) state.
2. V
CC
- 0.5V <
V
H
< V
CC
+0.5V
3. X : DON'T CARE
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS8ERLC128K32
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ............................................................................-0.6V to +7.0V
Operating Temperature Range
(1)
..................-55C to +125C
Storage Temperature Range .........................-65C to +150C
Voltage on any Pin Relative to Vss...................-0.5V to +7.0V
(2)
Max Junction Temperature**.......................................+150C
Thermal Resistance junction to case (
JC
):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
NOTES:
1) Including electrical characteristics and data retention.
2) V
IN
MIN = -1.0V for pulse width < 20ns.
*Stresses greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the de-
vice. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operation section of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow,
and humidity (plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C<T
A
<125
o
C or -40
o
C to +85
o
C; Vcc = 3.3V +/-.3V)
PARAMETER
Input High Voltage
Input High Voltage (RES\)
Input Low Voltage
Input Low Voltage (RES\)
LOW INPUT Leakage(RES\ Signal)
HIGH INPUT Leakage(RES\ Signal)
HIGH INPUT Leakage(RES\ Signal)
INPUT LEAKAGE CURRENT
2
CONDITIONS
SYMBOL
V
IH
V
H
V
IL
V
L
MIN
2.2
V
CC
-0.3
-0.3
1
-0.3
1
MAX
V
CC
+0.3
V
CC
+.3
0.8
0.4
UNITS
V
V
V
V
RES\=0V, VCC=3.6V
RES\=3.6V, VCC=3.6V
RES\=3.3V, VCC=3.3V
OV < V
IN
< V
CC
Outputs(s) Disabled,
OV < V
OUT
< V
CC
I
OH
= -0.4mA
I
OH
= -0.1mA
I
OL
= 2.1mA
I
OL
= 0.1mA
I
LI
(RES)
I
HI
(RES)
I
HI
(RES)
I
LI
I
LO
V
OH
V
OH
V
OL
V
OL
V
CC
-300
-10.0
-30.0
-10
-10
V
CC
x.8
V
CC
-0.3
--
--
3
10
10
--
--
0.4
0.2
3.6
V
V
V
V
V
OUTPUT LEAKAGE CURRENT
2
Output High Voltage
Output High Voltage
Output Low Voltage
Output Low Voltage
Supply Voltage
NOTE:
1) V
IL
(MIN): -1.0V for pulse width < 20ns.
2) All other Signal pins except RES\
PARAMETER
CONDITIONS
Iout = 0mA, V
CC
= 3.6V
Cycle = 1μS, Duty = 100%
SYM
MAX
-250
30
MAX
-300
30
UNITS
Power Supply Current:
Operating
I
cc3
Iout = 0mA, V
CC
= 3.6V
Cycle = MIN, Duty = 100%
CE\ = V
CC,
V
CC
= 3.6V
CE\ = V
IH,
V
CC
= 3.6V
I
CC1
I
CC2
80
70
mA
0.4
4
0.4
4
mA
mA
Power Supply Current:
Standby
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS8ERLC128K32
CAPACITANCE TABLE
1
(V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C, VCC=3.3V)
C
ADD
C
OE
C
WE,
C
CE
C
IO
SYMBOL
SYMBOL
PARAMETER
PARAMETER
A0 - A16 Capacitance
OE\, RES\, RDY Capacitance
WE\ and CE\ Capacitance
I/O 0- I/O 31 Capacitance
MAX
MAX
40
40
12
20
UNITS
pF
pF
pF
pF
NOTE:
1. This parameter is guaranteed but not tested.
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
Input pulse levels...........................................V
SS
to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
NOTES:
Vz is programmable from -2V to + 5V.
I
OL
and I
OH
programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
Current Source
I
OL
Device
Under
Test
-
+
+
Vz = 1.5V
(Bipolar
Supply)
Ceff = 50pf
Current Source
I
OH
Figure 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C or -40
o
C to +85
o
C; Vcc = 3.3V +.3V)
DESCRIPTION
Address to Output Delay
CE\ to Output Delay
OE\ to Output Delay
Address to Output Hold
CE\ or OE\ high to Output Float (1)
RES\ low to Output Float (1)
RES\ to Output Delay
TEST CONDITIONS
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
-250
SYMBOL MIN MAX
t
ACC
250
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
10
0
0
0
0
50
350
600
250
120
10
0
0
0
0
50
350
600
-300
MIN MAX UNITS
300
ns
300
130
ns
ns
ns
ns
ns
ns
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS8ERLC128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55
o
C < T
A
< +125
o
C; Vcc = 3.3V +.3V)
SYMBOL
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
Address Setup Time
Address Hold Time
CE\ to Write Setup Time (WE\ controlled)
CE\ Hold Time (WE\ controlled)
WE\ to Write Setup Time (CE\ controlled)
WE\ to Hold Time (CE\ controlled)
OE\ to Write Setup Time
OE\ to Hold Time
Data Setup Time
Data Hold Time
WE\ Pulse Width (WE\ controlled)
CE\ Pulse Width (CE\ controlled)
Data Latch Time
Byte Load Cycle
Byte Load Window
Write Cycle Time
Time to Device Busy
Write Start Time
Reset Protect Time
Reset High Time
(5)
PARAMETER
MIN
(2)
0
150
0
0
0
0
0
0
100
10
250
250
750
1
100
MAX
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
(3)
μs
μs
15
150
250
2
(4)
ms
ns
ns
μs
μs
100
READ TIMING WAVEFORM
ADDRESS
CE\
OE\
V
IH
HIGH-Z
t
RR
t
ACC
t
CE
t
OE
t
DF
t
OH
WE\
Data Out
DATA OUT VALID
t
DFR
RES\
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
5
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
