TSHA550.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 )
Package
Description
The TSHA550. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
94 8390
¾
Features
D
D
D
D
D
D
D
Extra high radiant power
Suitable for high pulse current operation
Standard T–1
¾
(ø 5 mm) package
Angle of half intensity
ϕ
=
±
24
°
Peak wavelength
l
p
= 875 nm
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81020
Rev. 2, 20-May-99
www.vishay.com
1 (6)
TSHA550.
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
250
P
V
– Power Dissipation ( mW )
I
F
– Forward Current ( mA )
200
10
4
t
p
= 100
m
s
t
p
/ T = 0.001
10
3
150
R
thJA
100
10
2
50
0
0
20
40
60
80
100
10
1
0
94 8005 e
1
2
3
4
94 7957 e
T
amb
– Ambient Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
V
Frel
– Relative Forward Voltage
I
F
– Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
I
F
= 10 mA
1.0
0.9
75
50
25
0
0
20
40
60
80
100
0.8
0.7
0
20
40
60
80
100
94 8002 e
T
amb
– Ambient Temperature (
°C
)
94 7990 e
T
amb
– Ambient Temperature (
°C
)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
I
e
– Radiant Intensity ( mW/sr )
TSHA 5503
TSHA 5502
100
10
1
I
F
– Forward Current ( A )
I
FSM
= 2.5 A ( Single Pulse )
t
p
/ T = 0.01
10
0
0.05
0.1
0.2
0.5
10
–1
10
–2
TSHA 5501
10
TSHA 5500
1
10
–1
10
0
10
1
10
2
94 8014 e
10
0
94 8003 e
t
p
– Pulse Duration ( ms )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81020
Rev. 2, 20-May-99
www.vishay.com
3 (6)
TSHA550.
Vishay Telefunken
1000
1.25
F
e
– Relative Radiant Power
F
e
– Radiant Power ( mW )
100
1.0
0.75
0.5
10
1
0.25
0
780
0.1
10
0
94 8015 e
F
e
(
l
)
rel
=
F
e
(
l
) /
F
e
(
l
p
)
l
– Wavelength ( nm )
880
980
I
F
= 100 mA
10
1
10
2
10
3
10
4
94 8000 e
I
F
– Forward Current ( mA )
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
10
°
20
°
1.6
I
e rel
– Relative Radiant Intensity
30°
1.2
I
e rel
;
F
e rel
I
F
= 20 mA
0.8
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.4
0
–10 0 10
94 8020 e
50
100
140
94 8016 e
0.6
0.4
0.2
0
0.2
0.4
0.6
T
amb
– Ambient Temperature (
°C
)
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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4 (6)
Document Number 81020
Rev. 2, 20-May-99
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