电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2N4119-TO-72-4L

产品描述Transistor,
产品类别分立半导体    晶体管   
文件大小124KB,共1页
制造商Linear Integrated Systems
下载文档 详细参数 全文预览

2N4119-TO-72-4L概述

Transistor,

2N4119-TO-72-4L规格参数

参数名称属性值
Objectid114451708
包装说明,
Reach Compliance Codecompliant
ECCN代码EAR99

文档预览

下载PDF文档
2N and SST 4117,
4118, 4119
ULTRA-HIGH INPUT IMPEDANCE
N-CHANNEL JFET
FEATURES
LOW POWER
MINIMUM CIRCUIT LOADING
@ 25°C (unless otherwise noted)
Gate-Source or Gate-Drain Voltage
(NOTE 1)
-40V
Gate-Current
Total Device Dissipation
(Derate 2mW/ºC above 25ºC)
Storage Temperature Range
Lead Temperature
(1/16” from case for 10 seconds)
300ºC
300mW
-55ºC to+150ºC
50mA
I
DSS
<600 µA (2N4117)
I
GSS
<1 pA (2N4117 A Series)
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
SOT-23
Top View
TO-72
Top View
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
2N&SST 4117A
2N4118
2N4117/A
SYMBOL
I
GSS
I
GSS
BV
GSS
V
GS(off)
I
DSS
g
fs
g
os
C
iss
C
rss
CHARACTERISTIC
Gate Reverse Current Standard
only
Gate Reverse Current
2N Series only
Gate-Source Breakdown
Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
(NOTE 2)
Common-Source Forward
Transconductance (NOTE
2)
Common-Source Output
Conductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
MIN
--
--
--
--
-40
-0.6
0.03
MAX
-10
-25
-1
-2.5
--
-1.8
0.60
MIN
--
--
--
--
-40
-1
0.08
MAX
-10
-25
-1
-2.5
--
-3
0.60
2N4119
MIN
--
--
--
--
-40
-2
0.20
MAX
-10
-25
-1
-2.5
--
-6
0.80
mA
UNITS
pA
nA
pA
nA
V
CONDITIONS
V
GS
=-10V V
DS
=0
V
GS
=-20V V
DS
=0
I
G
=-1µA
V
DS
=0
150ºC
150ºC
2N&SST 4118A 2N&SST 4119A
V
DS
=10V I
D
=1nA
V
DS
=10V V
GS
=0
FN4117/A 0.015
70
--
--
--
450
3
3
1.5
80
--
--
--
650
5
3
1.5
100
--
--
--
700
µS
10
V
DS
=10V V
GS
=0
3
pF
1.5
f=1MHz
f=1kHz
NOTES:
1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.
2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.)
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
5/02/2012 Rev#A4 ECN# 2N & SST 4117 4118 4119

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1247  1624  680  1449  1468  26  33  14  30  19 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved