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USBQNM50415CE3TR

产品描述Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN
产品类别分立半导体    二极管   
文件大小369KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 选型对比 全文预览

USBQNM50415CE3TR概述

Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN

USBQNM50415CE3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明R-PDSO-N4
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性ULTRA LOW CAPACITANCE
最小击穿电压16.7 V
配置SEPARATE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-N4
JESD-609代码e3
最大非重复峰值反向功率耗散500 W
元件数量2
端子数量4
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大重复峰值反向电压15 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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USBQNM50403Ce3 – USBQNM50424Ce3
Available
500 W, Non-Magnetic Low Capacitance
Bidirectional TVS array
DESCRIPTION
HALOGEN
FREE
This Transient Voltage Suppressor (TVS) is assembled in a non-magnetic QFN-143 package
with a leadframe 100% free of iron. It has the same pinout and footprint as the SOT-143
package and is aimed at applications in MRI machines and other magnetic environments
where the use of ferrous metals is not acceptable. The configuration gives protection to 1 bi-
directional data or interface line. It is designed for use in applications where low capacitance
protection is required at the board level from voltage transients caused by electrostatic
discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-
4-4 and the secondary effects of lightning. These TVS arrays have a peak power rating of 500
watts for an 8/20 μs pulse (figure 1). With a capacitance of only 3 pF, this part can provide
protection to very fast data lines including USB at 900 Mbits/sec.
QFN-143
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Protects 1 bidirectional line
Surge protection per IEC 61000-4-2 and IEC 61000-4-4
Ultra low capacitance
Low profile surface mount package
RoHS compliant versions are available
Also available:
Unidirectional
(QFN-143)
USBQNM50403e3 –
USBQNM50424e3
APPLICATIONS / BENEFITS
EIA RS485 data rates: 5 Mbps
10 Base-T Ethernet
USB data rate 900 Mbps
Non-magnetic for MRI applications
MAXIMUM RATINGS
@ 25 ºC unless otherwise noted
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Peak Pulse Power Dissipation with a 10/1000μs waveform
(with a duty factor of 0.01%)
Solder Temperature @ 10 s
Symbol
T
STG
T
J
P
PP
Value
-55 to +150
-55 to +125
500
260
Unit
o
C
o
C
W
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01087-2, Rev A (9/18/13)
©2013 Microsemi Corporation
Page 1 of 5

USBQNM50415CE3TR相似产品对比

USBQNM50415CE3TR USBQNM50415CE3 USBQNM50424CE3 USBQNM50412CE3 USBQNM50405CE3
描述 Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 2 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN
是否Rohs认证 符合 符合 符合 符合 符合
包装说明 R-PDSO-N4 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC , QFN-143, 4 PIN R-PDSO-N4 R-PDSO-N4 R-PDSO-N4
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE
最小击穿电压 16.7 V 16.7 V 26.7 V 13.3 V 6 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-N4 R-PDSO-N4 R-PDSO-N4 R-PDSO-N4 R-PDSO-N4
JESD-609代码 e3 e3 e3 e3 e3
最大非重复峰值反向功率耗散 500 W 500 W 500 W 500 W 500 W
元件数量 2 2 2 2 2
端子数量 4 4 4 4 4
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
最大重复峰值反向电压 15 V 15 V 24 V 12 V 5 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Microsemi Microsemi - Microsemi Microsemi
Base Number Matches 1 1 1 - -
击穿电压标称值 - 16.7 V 26.7 V 13.3 V 6 V
最大钳位电压 - 32 V 57 V 26 V 12 V
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