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71V67602S133PFGI8

产品描述TQFP-100, Reel
产品类别存储    存储   
文件大小505KB,共24页
制造商IDT (Integrated Device Technology)
标准
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71V67602S133PFGI8概述

TQFP-100, Reel

71V67602S133PFGI8规格参数

参数名称属性值
Brand NameIntegrated Device Technology
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码TQFP
包装说明LQFP, QFP100,.63X.87
针数100
制造商包装代码PKG100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Samacsys DescriptionTQFP 14.0 X 20.0 X 1.4 MM
最长访问时间4.2 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e3
长度20 mm
内存密度9437184 bit
内存集成电路类型CACHE SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5,3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.07 A
最小待机电流3.14 V
最大压摆率0.28 mA
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度14 mm
Base Number Matches1

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256K X 36, 512K X 18
3.3V Synchronous SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs, Single Cycle Deselect
IDT71V67602
IDT71V67802
Features
256K x 36, 512K x 18 memory configurations
Supports high system speed:
– 166MHz 3.5ns clock access time
– 150MHz 3.8ns clock access time
– 133MHz 4.2ns clock access time
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O supply (V
DDQ
)
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array.
The IDT71V67602/7802 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V676/78 SRAMs contain write, data,
address and control registers. Internal logic allows the SRAM to generate
a self-timed write based upon a decision which can be left until the end of
the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67602/7802 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the
LBO
input pin.
The IDT71V67602/7802 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
Description
Pin Description Summary
A
0
-A
18
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
5311 tbl 01
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V67802.
FEBRUARY 2009
1
©2002 Integrated Device Technology, Inc.
DSC-5311/09

71V67602S133PFGI8相似产品对比

71V67602S133PFGI8 71V67602S166PFG8 71V67602S150PFGI8 71V67602S133PFG8 71V67602S150PFG8 71V67602S133PFGI 71V67602S150PFGI 71V67602S150PFG 71V67602S150BGG 71V67602S166BGG
描述 TQFP-100, Reel TQFP-100, Reel TQFP-100, Reel TQFP-100, Reel TQFP-100, Reel TQFP-100, Tray TQFP-100, Tray TQFP-100, Tray PBGA-119, Tray PBGA-119, Tray
Brand Name Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology Integrated Device Technology
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP PBGA PBGA
包装说明 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50
针数 100 100 100 100 100 100 100 100 119 119
制造商包装代码 PKG100 PKG100 PKG100 PKG100 PKG100 PKG100 PKG100 PKG100 BGG119 BGG119
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Samacsys Description TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM TQFP 14.0 X 20.0 X 1.4 MM PBGA 14.0 X 22.0 MM X 1.27 MM PITCH PBGA 14.0 X 22.0 MM X 1.27 MM PITCH
最长访问时间 4.2 ns 3.5 ns 3.8 ns 4.2 ns 3.8 ns 4.2 ns 3.8 ns 3.8 ns 3.8 ns 3.5 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 133 MHz 166 MHz 150 MHz 133 MHz 150 MHz 133 MHz 150 MHz 150 MHz 150 MHz 166 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e1 e1
长度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm 22 mm 22 mm
内存密度 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
内存集成电路类型 CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
内存宽度 36 36 36 36 36 36 36 36 36 36
湿度敏感等级 3 3 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 100 100 100 100 100 100 100 100 119 119
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C
组织 256KX36 256KX36 256KX36 256KX36 256KX36 256KX36 256KX36 256KX36 256KX36 256KX36
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP LQFP LQFP LQFP LQFP BGA BGA
封装等效代码 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 BGA119,7X17,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260 260 260 260 260
电源 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 2.36 mm 2.36 mm
最大待机电流 0.07 A 0.05 A 0.07 A 0.05 A 0.05 A 0.07 A 0.07 A 0.05 A 0.05 A 0.05 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.28 mA 0.34 mA 0.325 mA 0.26 mA 0.305 mA 0.28 mA 0.325 mA 0.305 mA 0.305 mA 0.34 mA
最大供电电压 (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING BALL BALL
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 30 30 30
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 1 1 1 1 1 1 -

 
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