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PA28F800B5T90

产品描述512K X 8 FLASH 5V PROM, 80 ns, PDSO48
产品类别存储    存储   
文件大小488KB,共38页
制造商Intel(英特尔)
官网地址http://www.intel.com/
下载文档 详细参数 全文预览

PA28F800B5T90概述

512K X 8 FLASH 5V PROM, 80 ns, PDSO48

512K × 8 FLASH 5V 可编程只读存储器, 80 ns, PDSO48

PA28F800B5T90规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Intel(英特尔)
零件包装代码SOIC
包装说明0.525 X 1.110 INCH, PLASTIC, SOP-44
针数44
Reach Compliance Codeunknow
ECCN代码EAR99
最长访问时间90 ns
其他特性CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK
备用内存宽度8
启动块TOP
命令用户界面YES
数据轮询NO
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDSO-G44
JESD-609代码e0
长度28.2 mm
内存密度8388608 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
部门数/规模1,2,1,7
端子数量44
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织1MX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP44,.63
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
编程电压5 V
认证状态Not Qualified
座面最大高度2.95 mm
部门规模16K,8K,96K,128K
最大待机电流0.000008 A
最大压摆率0.07 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位NO
类型NOR TYPE
宽度13.3 mm

文档预览

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ADVANCE INFORMATION
SMART 5 BOOT BLOCK
FLASH MEMORY FAMILY
2, 4, 8 MBIT
28F200B5, 28F400B5, 28F800B5, 28F004B5
SmartVoltage Technology
Smart 5 Flash: 5 V Reads,
5 V or 12 V Writes
Increased Programming Throughput
at 12 V V
PP
Very High-Performance Read
2-, 4-Mbit: 60 ns Access Time
8-Mbit: 70 ns Access Time
x8 or x8/x16-Configurable Data Bus
Low Power Consumption
Max 60 mA Read Current at 5 V
Auto Power Savings: <1 mA Typical
Standby Current
Optimized Array Blocking Architecture
16-KB Protected Boot Block
Two 8-KB Parameter Blocks
96-KB and 128-KB Main Blocks
Top or Bottom Boot Locations
Extended Temperature Operation
–40 °C to +85 °C
Industry-Standard Packaging
40, 48-Lead TSOP, 44-Lead PSOP
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Extended Block Erase Cycling
100,000 Cycles at Commercial Temp
10,000 Cycles at Extended Temp
Hardware Data Protection Feature
Absolute Hardware-Protection for
Boot Block
Write Lockout during Power
Transitions
Automated Word/Byte Program and
Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
Provides Low-Power Mode and
Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
0.6
µ
ETOX IV Initial Production
0.4
µ
ETOX V Later Production
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Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density,
low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically-
blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for
embedded code execution applications, such as networking infrastructure and office automation.
Based on Intel’s boot block architecture, the Smart 5 boot block memory family enables quick and easy
upgrades for designs that demand state-of-the-art technology. This family of products comes in industry-
standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for
board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.
December 1997
Order Number: 290599-004

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