PACDN3401C
Transient Voltage Suppressor, Single 5V, 0402 SMD
Features
• Single channel voltage suppressor in a surface
mount EIA standard 0402-sized device
• Compact 0402 size saves board space and eases
layout in area critical applications compared to
traditional wire bonded IC packages
• In-system ESD protection to over 30kV contact
discharge per IEC 61000-4-2 international ESD
standard
• Improved electrical characteristics over
P0402FC05C Protek devices
• Less than 10µA leakage at 5.9V
Applications
• Cell phones
• PDAs
• Palmtop PCs
• Notebook PCs
• Set-top box audio and video ports
• Protection of interface ports or IC pins which are
exposed to ESD hazards
• PCMCIA cards (PC card)
Product Description
The PACDN3401C is a transient voltage suppressor that
is ideal for very high level protection for sensitive 5V
electronic components that may be subjected to electro-
static discharge (ESD). The bipolar configuration pro-
vides symmetrical ESD protection in cases where nodes
with AC signals are present. This device is designed and
characterized to safely dissipate ESD strikes at 30kV
contact discharge, well beyond the maximum require-
ments of the IEC 61000-4-2 international standard (Level
4, 8kV contact discharge).
Using the MIL-STD-883D (Method 3015) specification for
Human Body Model (HBM) ESD, signal pins are pro-
tected for contact discharges to greater than 30kV.
Schematic Configuration
S t a n d a r d Pa r t O r d e r i n g I n f o r m a t i o n
Package
Style
Chip Scale
Bumps
2
Ordering Part Number
Tape & Reel
PACDN3401C/R
© 2000 California Micro Devices Corp. All rights reserved.
C1561000
215 Topaz Street, Milpitas, California 95035
11/2/2000
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
1
PACDN3401C
Specifications:
(At 25
°
C unless specified otherwise)
MIN
Reverse Stand-off Voltage, I = 10µA
Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, 10mA
In-system ESD withstand voltage*:
Human Body Model (MIL-STD-883D, method 3015)
IEC 61000-4-2, contact discharge method
Clamping voltage during ESD discharge*
MIL-STD-883D (Method 3015), 8kV
Capacitance at 0V dc, 1MHz
Temperature Range:
Operating
Storage
* This parameter is guaranteed by design and characterization.
TYPE
MAX
UNIT
V
±5.9
6.0
–9.2
±30
±30
13
45
–40
–65
85
150
7.5
–7.5
9.2
–6.0
V
V
kV
kV
V
pF
°C
Device Dimensions
40 mils/1.0mm
3 mils
3 mils
14 mils
20 mils/0.5mm
6 mils
Dimensions are ±2 mils
1000 mils = 1 inch
14 mils
5 mils
Device Capacitance
50
40
Capacitance (pF)
30
20
10
0
0
1
2
3
4
5
Voltage Across Device (V)
Typical Device Capacitance vs. Voltage
©2000 California Micro Devices Corp. All rights reserved.
2
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
11/2/2000
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