SiT5357
Description
PRELIMINARY
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Features
The
SiT5357
is the industry’s only ±100 ppb precision
capable of up to 220 MHz output frequency. This MEMS
device is fully compliant to the GR-1244 Stratum 3
oscillator specifications. It is engineered for best dynamic
performance, and is ideal for high reliability telecom,
wireless and networking, industrial, precision GNSS and
audio/video applications.
By leveraging SiTime’s unique DualMEMS™ temperature
sensing and TurboCompensation™ technology, the
SiT5357 delivers the most stable timing in the presence of
environmental stressors – air flow, temperature
perturbation, vibration, shock and electromagnetic
interference (EMI). This device also integrates multiple on-
chip regulators, providing power supply noise filtering and
eliminating the need for a dedicated external LDO.
The SiT5357 offers three device configurations that can be
ordered with the associated
ordering codes:
1)
TCXO with non-pullable output frequency
2)
3)
VCTCXO allowing voltage control of output frequency
DCTCXO enabling digital control of the output
2
frequency through the I C interface
Any frequency between 60.000001 MHz and 220
MHz in 1 Hz steps
Exceptional dynamic stability under airflow, thermal
shock
±100 ppb over-temperature stability
±2.5
ppb/C frequency slope (ΔF/ΔT)
3e-11 ADEV at 10 second averaging time
0.2 ps/mV PSNR, eliminating the need for an
external LDO
No activity dips or micro jumps
Resistant to shock, vibration and board bending
Up to ±3200 ppm pull range (VCTCXO or DCTCXO)
2
Digital frequency pulling (DCTCXO) via I C
Digital control of output frequency and pull range
Frequency pull resolution as low as 5 ppt (0.005 ppb)
-40°C to +85°C operating temperature, contact
SiTime
for +105C option
On-chip regulators, eliminating the need for an
external LDO
2.5V, 2.8V, 3.0V and 3.3V supply voltage
LVCMOS or clipped sinewave output
RoHS and REACH compliant, Pb-free, Halogen-free
and Antimony-free
SiT5357 can be factory-programmed to any combination of
frequency, stability, voltage, and pull range. This
programmability enables designers to optimize the clock
configuration while eliminating the long lead time and
customization cost associated with quartz TCXOs where
each frequency is custom built.
Applications
4G/5G radio
Small cell
Synchronous Ethernet
Optical transport – SONET/SDH, OTN
IEEE1588
Test and measurement
Block Diagram
5.0 x 3.2 mm Package Pinout
SDA / NC
OE / VC / NC
SCL / NC
NC
GND
1
10
9
VDD
NC
NC
CLK
2
3
8
7
4
5
6
A0 / NC
Figure 1. SiT5357 Block Diagram
Figure 2. Pin Assignments (Top view)
(Refer to Table 9 for Pin Descriptions)
Rev 0.51
August 20, 2017
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
TABLE OF CONTENTS
PRELIMINARY
Description ..............................................................................................................................................................................1
Features ..................................................................................................................................................................................1
Applications.............................................................................................................................................................................1
Block Diagram .........................................................................................................................................................................1
5.0 x 3.2 mm Package Pinout ..................................................................................................................................................1
Electrical Characteristics .........................................................................................................................................................3
Modes of Operation and Pin-outs.............................................................................................................................................6
Pin-out Top Views ............................................................................................................................................................ 6
Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs .........................................................................................7
Waveforms ..............................................................................................................................................................................9
Timing Diagrams ................................................................................................................................................................... 10
Architecture Overview ........................................................................................................................................................... 11
Functional Overview .............................................................................................................................................................. 11
Frequency Stability ......................................................................................................................................................... 11
Output frequency and format .......................................................................................................................................... 11
Output Frequency Tuning ............................................................................................................................................... 11
Pin 1 Configuration (OE, VC, or NC) ............................................................................................................................... 12
Operating Mode Descriptions ................................................................................................................................................ 13
TCXO Mode ................................................................................................................................................................... 13
VCTCXO Mode .............................................................................................................................................................. 14
Linearity ......................................................................................................................................................................... 15
Control Voltage Bandwidth ............................................................................................................................................. 15
FV Characteristic Slope K
V
............................................................................................................................................. 15
DCTCXO Mode .............................................................................................................................................................. 16
Pull Range, Absolute Pull Range ........................................................................................................................................... 16
I C Control Registers ............................................................................................................................................................. 21
Register Descriptions ............................................................................................................................................................ 21
Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) ........................................................... 21
Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW) ........................................ 22
Register Address: 0x02. DIGITAL PULL RANGE CONTROL .......................................................................................... 23
Register Address: 0x05. PULL-UP DRIVE STRENGTH CONTROL ................................................................................ 24
Register Address: 0x06. PULL-DOWN DRIVE STRENGTH CONTROL .......................................................................... 25
Serial Interface Configuration Description .............................................................................................................................. 26
Serial Signal Format .............................................................................................................................................................. 26
Parallel Signal Format ........................................................................................................................................................... 27
Parallel Data Format.............................................................................................................................................................. 27
I C Timing Specification......................................................................................................................................................... 29
I C Device Address Modes .................................................................................................................................................... 30
Schematic Example............................................................................................................................................................... 31
Dimensions and Patterns....................................................................................................................................................... 32
Ordering Information.............................................................................................................................................................. 33
2
2
2
Rev 0.51
Page 2 of 34
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Electrical Characteristics
PRELIMINARY
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V Vdd
Table 1. Output Characteristics
Parameters
Output Frequency Range
Symbol
F
Min.
60.000001
Typ.
–
Max.
220
Unit
MHz
Condition
Frequency Coverage
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Voltage Level
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change to
Temperature Ramp
Initial Tolerance
24-hour holdover stability
Hysteresis Over Temperature
DC
Tr, Tf
VOH
VOL
V_out
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_hys
45
–
90%
–
0.8
-0.1
–
–
-1
-0.28
–
–
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Aging
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change during
Temperature Ramp
Initial Tolerance
24-hour holdover
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Total Stability
Start-up Time
First Pulse Accuracy
F_Vdd
F_load
F_1d
F_1y
F_20y
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_Vdd
F_load
F_1d
F_1y
F_20y
T
T_start
T_stability
–
–
–
–
–
–
-0.2
0.25
–
–
-1
-0.32
–
–
–
–
–
-4.6
–
–
±2.5
±2
±1
±3
±1
–
5
10
–
1
–
–
–
–
±2.5
±0.021
–
–
±30
±20
±2.5
±1
±1
±3
±0.5
±1
–
–
±8
±0.07
–
55
–
–
10%
1.2
+0.1
–
–
+1
+0.28
–
–
–
–
–
–
–
–
+0.2
+0.25
–
–
+1
+0.32
–
–
–
–
–
+4.6
–
–
%
ns
Vdd
Vdd
V
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppb
ppb
ppm
ppm
ppm
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppm
ppm
ms
ms
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down
shift at 48 hours after 2 reflows
Per Stratum 3 definition
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
Stratum 3 per GR-1244
Time to first pulse, measured from the time Vdd
reaches 90% of its final value
Time to first accurate pulse within rated stability,
measured from the time Vdd reaches 90% of its final
value
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down shift
at 48 hours after 2 reflows
Per Stratum 3 definition
-40 to 85C
-20 to 70C
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
At 25°C
Referenced to (fmax + fmin)/2 over the specified
temperature range
10% - 90% Vdd
I
OH
= -6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
I
OL
= 6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
Measured peak-to-peak swing at any Vdd
Referenced to (max frequency + minimum
frequency)/2 over the specified temperature range
Clipped Sinewave Output Characteristics
Frequency Stability - Stratum 3+ Grade
Frequency Stability - Stratum 3 Grade
Start-up Characteristics
Rev 0.51
Page 3 of 34
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Operating Temperature Range
IDD
I_od
T_use
–
–
-20
-40
Typ.
2.5
2.8
3.0
3.3
Max.
2.75
3.08
3.3
3.63
Unit
V
V
V
V
mA
mA
°C
°C
PRELIMINARY
Condition
Contact
SiTime
for 2.25V to 3.63V continuous supply
voltage support
Supply Voltage
Current Consumption
–
45
44.5
–
–
–
Temperature Range
+70
+85
F = 98.304 MHz, No Load
OE = GND, output is weakly pulled down
Extended commercial
Industrial. Contact
SiTime
for 105
°C
support
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Pull Range
PR
Symbol
Z_in
VIH
VIL
Min.
–
70
–
Typ.
100
–
–
Max.
–
–
30
Unit
kΩ
%
%
2
Condition
Internal pull up to Vdd
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I C mode
±6.25, ±10, ±12.5, ±25, ±50, ±80,
±100, ±125, ±150, ±200, ±400,
±600, ±800, ±1200, ±1600,
±3200
90%
–
10
–
Positive
–
2
ppm
Voltage Control Characteristics
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Change Polarity
Pull Range Linearity
Input Voltage Low
Input Voltage High
Output Voltage Low
Output Current High
Leakage in high impedance mode
Input Hysteresis
Input Capacitance
Rise Time
Fall Time
VIL
VIH
VOL
IOL
I_leak
V_hys
C_in
Tr
Tf
VC_U
VC_L
VC_z
VC_c
–
–
–
10
0.5
–
–
–
–
–
–
–
–
–
–
–
–
10%
–
–
–
0.3
–
0.4
–
24
0.4
0.3
3
120
60
75
Vdd
Vdd
MΩ
kHz
%
2
Contact
SiTime
for other input bandwidth options
I C Interface Characteristics, 1 MHz, 200 Ohm, 550 pF (Max I C Bus Load)
–
0.7
–
21
5.5
0.2
0.2
–
–
30
40
V
V
V
mA
µA
V
V
pF
ns
ns
ns
Vdd = 3.3V, 30% to 70%
Vdd = 2.5V, 30% to 70%
0.1 Vdd< VOUT < 0.9 Vdd
Vdd = 3.3V
Vdd = 2.5V
Rev 0.51
Page 4 of 34
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 4. Jitter & Phase Noise
Parameters
RMS Phase Jitter (random)
T_phj
–
Spurs
RMS Period Jitter
Peak Cycle-to-Cycle Jitter
1 Hz offset
10 Hz offset
100 Hz offset
1 kHz offset
10 kHz offset
100 kHz offset
1 MHz offset
5 MHz offset
T_jitt
T_jitt_cc
–
–
–
–
–
–
–
–
–
–
–
0.30
-94
2
10
-54
-82
-104
-126
-132
-135
-149
-155
–
–
–
–
Phase Noise
–
–
–
–
–
–
–
–
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
ps
dBc
ps
ps
Symbol
Min.
Typ.
Max.
Jitter
–
0.30
–
ps
Unit
PRELIMINARY
Condition
f = 98.304 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 98.304 MHz, 12 kHz to 5 MHz offsets
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz, TCXO and DCTCXO modes, and
VCTCXO mode with ±6.25 ppm pull range
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Continuous Power Supply Voltage Range (Vdd)
Human Body Model (HBM) ESD Protection
Soldering Temperature (follow standard Pb-free
soldering guidelines)
Junction Temperature
[1]
Test Conditions
Value
-65 to 125
-0.5 to 4
Unit
°C
V
V
°C
°C
JESD22-A114
–
260
130
Note:
1. Exceeding this temperature for an extended period of time may damage the device.
Table 6. Thermal Considerations
Package
Ceramic 5.0 x 3.2 mm
[2]
JA, 4 Layer Board
(°C/W)
TBD
JA, 2 Layer Board
(°C/W)
TBD
JC, Bottom
(°C/W)
TBD
Note:
2. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 7. Environmental Compliance
Parameter
Mechanical Shock Resistance
Mechanical Vibration Resistance
Temperature Cycle
Solderability
Moisture Sensitivity Level
Test Conditions
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @260°C
Value
20,000
70
–
–
–
Unit
g
G
–
–
–
Rev 0.51
Page 5 of 34
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