CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Operating Supply
Operating Supply
Shutdown Supply
GATE CONTROL OUTPUTS
HGATE dv/dt (No External Capacitor)
dv/dt
V
CC
= 12V
V
CC
= 5V
LGATE dv/dt (No External Capacitor)
dv/dt
V
CC
= 12V
V
CC
= 5V
HGATE Pull-Up Current
I
HGATE
V
CC
= 12V, V
HGATE
= 19V
V
CC
= 5V, V
HGATE
= 9.5V
HGATE Output Voltage
V
HGATE
V
CC
= 12V
V
CC
= 5V
LGATE Output Voltage
V
LGATE
V
CC
= 12V
V
CC
= 5V
ENABLE
Input Threshold Voltage
Enable Current
V
EN
I
EN
V
CC
= 12V
V
EN
= 5V
1
-
-
-
2.4
1
V
µA
2.5
2.4
2.5
2.6
7.6
7.6
20.7
11.6
15.2
10.6
5
5
5
5
13.4
12.3
21.8
12.5
16.3
11.7
8.5
7.2
8.5
7.4
18.5
18.5
22.8
13.4
18.3
12.9
V/ms
V/ms
V/ms
V/ms
µA
µA
V
V
V
V
I
CC,12
I
CC,5
I
SHDN
V
EN
= 5V,V
CC
= 12V
V
EN
= 5V, V
CC
= 5V
V
EN
= 0V
-
-
-
1.6
0.77
-
2.3
1.1
1
mA
mA
µA
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
3
HIP1020
Typical Performance Curves
25
20
15
VOLTS
10
VOLTS
C1 = 22nF
22nF
NOTE 2
NOTE 3
C1 = 10nF
15
10
C1 = 22nF
5
0
-5
0
10
20
30
40
50
0
10
20
30
40
50
MILLISECONDS
MILLISECONDS
NOTE 2
C1 = 10nF
25
20
NOTE 3
5
0
-5
FIGURE 2. HGATE (PIN 4) TURNING ON WITH VCC = 12V
15
NOTE 2
10
C1 = 22nF
VOLTS
5
NOTE 3
FIGURE 3. LGATE (PIN 3) TURNING ON WITH VCC = 12V
15
NOTE 2
NOTE 3
C1 = 10nF
C1 = 10nF
10
VOLTS
C1 = 22nF
5
0
0
-5
0
10
20
30
40
50
MILLISECONDS
-5
0
10
20
30
40
50
MILLISECONDS
FIGURE 4. HGATE (PIN 4) TURNING ON WITH VCC = 5V
NOTES: Device is enabled at 10 milliseconds.
2. Pins 3 and 4 are unconnected.
FIGURE 5. LGATE (PIN 3)TURNING ON WITH VCC = 5V
3. Pins 3 and 4 are connected to the gates of “typical” high-performance N-Channel MOSFETs.
Application Information
The HIP1020 was designed specifically to address the
requirements of Device Bay peripherals. The small package,
low cost and integrated features make it the ideal component
for high-side power control of all three Device-Bay rail
voltages without using any additional components except for
the switching MOSFETs themselves. The integrated charge
pump supplies sufficient voltage to fully enhance the lower-
cost N-Channel power MOSFETs, and the internally-
controlled turn-on ramp provides soft switching for all types
of loads.
Although the HIP1020 was developed with Device Bay in
mind, it has the versatility to perform in any situation where
low-cost load switching is required.
MOSFET Selection for Device Bay Peripherals
When selecting power MOSFETs for Device Bay (or any
similar application), two major concerns are the voltage drop
across the MOSFET and the thermal requirements imposed
by the particular application. Voltage drop across the
MOSFET is controlled by its on-state resistance, r
DS(ON)
,
and the peak current through the device, while the thermal
requirements are determined by several factors including
ambient temperature, amount of air flow if any, area of the
copper mounting pad, the thermal characteristics of the
MOSFET and its package, and the average current through
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