Data Sheet
PT7C5015AL series
Crystal Oscillator
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Features
•
•
•
•
•
•
Up to 60MHz operation
Capacitors C
G
(18pF) and C
D
(18pF) built-in
Inverter amplifier feedback resistor built-in
2.5 to 2.75V operating supply voltage range
CMOS output duty level (1/2VDD)
Clock output (f
O
, f
O
/2, f
O
/4, f
O
/8 or f
O
/16,
determined by internal connection, f
O
is oscillator
frequency)
•
•
•
•
•
Standby function (High impedance in standby
mode, oscillator stops)
Low standby current (Power-save pull-up resistor
built-in)
Molybdenum-gate CMOS process
-40 to 85℃ operating temperature range
Die form
Description
The PT7C5015 series are 2.5V operation crystal
oscillator ICs. They are available for frequencies up to
60MHz. They employ a process optimized for 2.5V
operation, resulting in both improved operating
frequency and stable operation. They feature a large
reduction in chip size, when compared to existing
devices, making possible the construction of small-
sized crystal oscillators.
Ordering Information
Part no.
PT7C5015ALx-2DE
PT7C5015ALx-3DE
Package type
Die form
Die form
Note:
1.Below is the detailed definition of part no.
2. “-2” & “-3” show the different die thickness; “-2”:
220±20um; “-3”: 180±20um.
Application
•
PT7C
PT7C
PT7C
Device Type
Clock Series
XO 5015 Series
Series Type
5015
5014
5014
A
A
A
Used for crystal oscillator
L
L
L
1
1
1
Output frequency
Suffix
1
2
3
4
5
f
output
(V)
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
PT0250(04/06)
1
Ver:0
Data Sheet
PT7C5015AL series
Crystal Oscillator
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Series Configuration
Part No.
PT7C5015AL1
PT7C5015AL2
PT7C5015AL3
PT7C5015AL4
PT7C5015AL5
Output
freq.
fo
f
o
/2
f
o
/4
f
o
/8
f
o
/16
18
18
4~60
4~50
Built-in capacitance(pF)
C
G
C
D
Recommended operating freq. (MHz)
C
L
=15pF
C
L
=30pF
Standby
function
Yes
Yes
Yes
Yes
Yes
Block Diagram
INHN=Low active
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
Any fo, fo/2, fo/4, fo/8, fo/16 output frequency
High impedance
Oscillator
Normal operation
Stopped
Power-save Pull-up Resistance
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
PT0250(04/06)
2
Ver:0
Data Sheet
PT7C5015AL series
Crystal Oscillator
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Pad Configuration
Sensor
VDD
Q
Die No.
GND
INHN
XT
XTN
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
104.80
294.80
512.70
sensor
-50
730.00
XTN
550.50
VDD
104.90
503.50
GND
632.90
INHN
104.80
307.50
Q
632.90
XT
244.90
104.80
Note:
PT7C5015ALx-2: Substrate is connected to GND or VDD or floating.
PT7C5015ALx-3: Substrate is connected to GND or floating.
Die Size:
820µm*780µm (Including scribe line size.)
Die Thickness:
PT7C5015ALx-2: 220±20µm; PT7C5015ALx-3: 180±20µm( no coating);
Pad Size:
100µm*100µm
Pad Description
Sym.
XTN
XT
INHN
V
DD
GND
Q
Type
O
I
I
P
P
O
Amplifier output.
Description
Crystal oscillator connected between XT and XTN
Amplifier input.
Output state control input. High impedance when LOW ( oscillator stops). Power-saving
pull-up resistor built in.
Supply voltage
Ground
Output. Output frequency (fo, fo/2, fo/4, fo/8, fo/16) determined by internal connection, fo is
oscillator frequency. High impedance is standby mode.
Cb
F (MHz)
50
R (Ω)
16.12
L (mH)
6.88
Ca (fF)
1.48
Cb (pF)
1.18
L
Ca
R
PT0250(04/06)
3
Ver:0
Data Sheet
PT7C5015AL series
Crystal Oscillator
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Maximum Ratings
Note:
oC to +150oC
Storage Temperature ................................................................................- 65
Stresses greater than those listed under MAXIMUM
Ambient Temperature with Power Applied................................................- 40oC to +85oC RATINGS may cause permanent damage to the
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +7.0V device. This is a stress rating only and functional
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V operation of the device at these or any other condi-
DC Output............................................................... -0.5V to V
DD
+0.5V tions above those indicated in the operational sec-
DC Output Current (all outputs) ................................................... 12mA tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
Sym.
V
DD
V
IN
T
A
f
OSC
Parameter
Supply voltage
Input voltage
Operating temperature
Operating frequency
All series
C
L
≤
15pF
C
L
≤
30pF
-
Series
Conditions
Min
2.25
0
-40
4
4
Typ
-
-
-
-
-
Max
2.75
V
DD
+85
60
50
Unit
V
V
°C
MHz
MHz
PT0250(04/06)
4
Ver:0
Data Sheet
PT7C5015AL series
Crystal Oscillator
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DC Electrical Characteristics
(V
DD
= 2.25 to 2.75V, T
A
= -40 to 85°C, unless otherwise noted.)
Sym.
Parameter
Condition
PT7C5015AL1
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF
f = 60 MHz
PT7C5015AL2
PT7C5015AL3
PT7C5015AL4
PT7C5015AL5
Min
-
-
-
-
-
-
0.7 V
DD
-
2
Typ
5.5
4
3
2.5
2
-
-
-
6
100
-
-
300
18
18
1.95
0.3
Max
11
8
6
5
4
3
-
0.3 V
DD
12
200
10
Unit
I
DD
Current consumption
mA
I
ST
Standby current
Measurement cct 3, INHN=LOW
INHN pin
INHN pin
Measurement cct 4,
µA
V
V
MΩ
kΩ
µA
V
IH
High level input voltage
V
IL
Low level input voltage
R
UP1
R
UP2
I
Z
R
f
C
G
C
D
Output leakage current
Feedback resistance
Built-in capacitance
INHN pull-up resistance
20
Q: measurement cct2, INHN=LOW
Measurement cct 5
Design value, determined by the internal wafer pattern
15.3
1.65
-
V
OH
= V
DD
V
OL
= GND
-
-
100
15.3
10
600
20.7
pF
20.7
-
0.4
V
V
kΩ
V
OH
High level output voltage Q: measurement cct1, V
DD
= 2.25V, I
OH
=4mA
V
OL
Low level output voltage
Q: measurement cct2, V
DD
= 2.25V, I
OL
=4mA
PT0250(04/06)
5
Ver:0
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
