CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the Drain Modified MOSFET
Lead, 2.0mm (0.08in) From Symbol Showing the In-
Header to Center of Die
ternal Devices
Measured From the Source Inductances
Lead, 2.0mm (0.08in) From
Header to Source Bonding
Pad
G
L
S
S
D
L
D
TEST CONDITIONS
I
D
= -250µA, V
GS
= 0V, (Figure 9)
V
GS
= V
DS
, I
D
= -250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V
V
GS
=
±20V
I
D
= -0.8A, V
GS
= -10V, (Figures 7, 8)
V
DS
< 50V, I
D
= -0.8A (Figure 11)
V
DD
= 0.5 x Rated BV
DSS
, I
D
= -1.0A,
R
G
= 9.1Ω, V
GS
= -10V, (Figures 16, 17)
R
L
= 50Ω for V
DD
= -50V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
V
GS
= -10V, I
D
= -1.0A, V
DS
= 0.8 x Rated BV
DSS
(Figures 13, 18, 19)
Gate Charge is Essentially Independent of Operating
Temperature
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 10)
MIN
-100
-2
-
-
-1.0
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.5
1.2
25
50
50
50
16
9
7
300
200
50
4.0
MAX
-
-4
-25
-250
-
±500
0.6
-
50
100
100
100
20
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
L
S
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θJA
Typical Socket Mount
-
-
120
o
C/W
4-46
IRFD9120
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
G
D
MIN
-
-
TYP
-
-
MAX
-1.0
-8.0
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -1.0A, V
GS
= 0V, (Figure 12)
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= -4.0A, dI
SD
/dt = 100A/µs
-
-
-
-
150
0.9
-1.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
80µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
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