AT65609EHV
Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM
DATASHEET
Features
Asynchronous SRAM
Operating Voltage: 5V
Read Access Time: 40 ns
Write Cycle Time: 30 ns
Very Low Power Consumption (Pre-RAD)
Active: 275 mW (Max)
Standby: 44 mW (Max)
Wide Temperature Range: -55°C to +125°C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
@125°C
Radiation Tolerance
(1)
Tested up to a Total Dose of 300 krads (Si)
RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019
ESD better than 4000V
Deliveries at least equivalent to QML procurement according to MIL-PRF38535
Pin to pin compatible with M65608E
Note:
1.
tolerance to MBU’s may need to be enhanced by the application
Description
The AT65609EHV is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the AT65609EHV combines an
extremely low standby supply current with a fast access time over the full military
temperature range. The high stability of the 6T cell provides an excellent protection
against soft errors due to noise.
The AT65609EHV is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is manufactured on the same process as the MH1RT Rad-Hard sea of gates series.
7832E–AERO–09/14
Table of Contents
1. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2. Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3. Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4. Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4.1
4.2
4.3
4.4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Military Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5
5
5
5. DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1
5.2
DC Test Conditions (Pre and Post-Radiation) . . . . . . . . . . . . . . . . . . . . . . . . . 6
Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
6. AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6.1
6.2
6.3
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Loads Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Data Retention Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6.3.1
Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
6.3.2
Data Retention Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Write Cycle (Pre and Post-Radiation). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.4.1
Write Cycle 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
6.4.2
Write Cycle 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
6.4.3
Write Cycle 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Read Cycle (Pre and Post-Radiation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.5.1
Read Cycle 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
6.5.2
Read Cycle 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
6.5.3
Read Cycle 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
6.4
6.5
7. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
8. Package Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8.1
8.2
32-lead Flat Pack 400 Mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
32-lead Side Brazed 400 Mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
9. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AT65609EHV [DATASHEET]
7832E–AERO–09/14
2
1.
Block Diagram
A
5
A
6
A
7
A
8
A
9
A
11
A
13
A
14
A
15
A
16
I/O
0
I/O
7
Vcc
COLUMN DECODER
GND
1024 ROWS
A
0
A
1
MEMORY ARRAY
1024x128x8
INPUT
DATA
CIRCUIT
128 COLUMNS
COLUMN DECODER
A
2
A
3
A
4
A
10
A
12
CS
1
OE
WE
CS
2
CONTROL
CIRCUIT
2.
Pin Assignment
Figure 2-1. 32-lead DIL side-brazed or 32-lead Flat Pack - 400 Mils
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
Note:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
NC pin is not bonded internally and can be connected to GND or VCC.
AT65609EHV [DATASHEET]
7832E–AERO–09/14
3
3.
Pin Description
Table 3-1.
Names
A0 - A16
I/O0 - I/O7
CS1
CS2
WE
OE
VCC
GND
Pin Names
Description
Address inputs
Data Inputs/Outputs
Chip select 1
Chip select 2
Write Enable
Output Enable
Power
Power
Table 3-2.
CS1
H
X
L
L
L
Truth Table
CS2
X
L
H
H
H
WE
X
X
H
L
H
OE
X
X
L
X
H
Inputs/ Outputs
Z
Z
Data Out
Data In
Z
Mode
Deselect/Power-down
Deselect/Power-down
Read
Write
Output Disable
Note:
L = low, H = high, X = H or L, Z = high impedance.
AT65609EHV [DATASHEET]
7832E–AERO–09/14
4
4.
4.1
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential:-0.5V + 7.0V
DC input voltage:GND - 0.5V to VCC + 0.5
DC output voltage high Z state:GND - 0.5V to VCC + 0.5
Storage temperature:-65°C to +150°C
Output current from output pins (low):20 mA
Electro Static Discharge voltage with HBM method
(MIL STD 883D method 3015): > 4000V
Electro Static Discharge voltage with Socketed CDM
method (ANSI/ESD SP5.3.2-2004): > 1000V
*NOTE: Stresses beyond those listed under "Absolute
Maximum Ratings” may cause permanent
damage to the device. This is a stress rating
only and functional operation of the device at
these or any other conditions beyond those
indicated in the operational sections of this
specification is not implied.
Exposure
between recommended DC operating and
absolute maximum rating conditions for
extended periods may affect device
reliability.
4.2
Military Operating Range
Operating Voltage
5V + 10%
Operating Temperature
-55
°
C to + 125°C
°
4.3
Recommended DC Operating Conditions
Parameter
Description
Min
4.5
0.0
GND - 0.5
2.2
Typ
5.0
0.0
0.0
–
Max
5.5
0.0
0.8
VCC + 0.5
Unit
V
V
V
V
V
CC
Gnd
V
IL
V
IH
Supply voltage
Ground
Input low voltage
Input high voltage
4.4
Capacitance
Parameter
Description
Max
8
8
Unit
pF
pF
Cin
(1)
Cout
(1)
Note:
Input low voltage
Output high voltage
1. Guaranteed but not tested.
AT65609EHV [DATASHEET]
7832E–AERO–09/14
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
