CNY17
TRIOS
Phototransistor
Optocoupler
FEATURES
• High Current Transfer Ratio
CNY17-1, 40 to 80%
CNY17-2, 63 to 125%
CNY17-3, 100 to 200%
CNY17-4, 160 to 320%
• Breakdown Voltage, 5300 V
RMS
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
V
VDE #0884, Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
.300 (7.62)
typ.
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (1.22)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
The CNY17 is an optically coupled pair consisting
of a Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
Maximum Ratings
(
T
A
=25
°
C)
Emitter
Reverse Voltage .............................................6.0 V
Forward Current .......................................... 60 mA
Surge Current (t
≤
10
µ
s)................................. 2.5 A
Power Dissipation......................................100 mW
Detector
Collector-Emitter Breakdown Voltage..............70 V
Emitter-Base Breakdown Voltage ...................7.0 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)..................... 100 mA
Power Dissipation......................................150 mW
Package
Isolation Test Voltage (between emitter &
detector referred to climate DIN 50014,
part 2, Nov. 74) (t=1 sec)...................5300 V
RMS
Creepage Distance .................................
≥
7.0 mm
Clearance Distance.................................
≥
7.0 mm
Isolation Thickness between
Emitter and Detector.............................
≥
0.4 mm
Comparative Tracking Index per DIN IEC 112/
VDE0303, part 1 ........................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C..............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Storage Temperature...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Junction Temperature...................................100
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) .........260
°
C
Document Number: 83606
Revision 17-August-01
Characteristics
(
T
A
=25
°
C)
Parameter
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Symbol
Values
Unit
Condition
V
F
V
BR
I
R
—
1.25
(
≤
1.65)
V
I
F
= 60 mA
I
R
= 10 mA
≥
6.0
0.01 (
≤
10)
25
750
µ
A
pF
K/W
V
R
= 6.0 V
V
R
=0 V, f=1.0 MHz
—
R
thjamb
C
CE
C
CB
C
EB
R
thjamb
5.2
6.5
7.5
500
pF
V
CE
=5.0 V, f=1.0 MHz
V
CB
=5.0 V, f=1.0 MHz
V
EB
=5.0 V, f=1.0 MHz
—
Thermal Resistance
Package
Collector-Emitter
Saturation Voltage
Coupling Capacitance
K/W
V
CEsat
C
C
0.25 (
≤
0.4)
0.6
V
pF
I
F
=10 mA,
I
C
=2.5 mA
—
www.vishay.com
2–68
Figure 6. Current transfer ratio versus
diode current
(T
A
=50°C)
V
CE
=5.0 V,
I
C
/I
F
=f (I
F
)
Figure 9. Transistor characteristics
(B=550)
CNY17-3, -4
I
C
=f(V
CE
)
(T
A
=25°C,
I
F
=0)
Figure 12. Collector emitter off-state
current
I
CEO
=f (V, T) (T
A
=25°C,
I
F
=0)
1
2
3
4
Figure 7. Current transfer ratio versus
diode current
(T
A
=75°C)
V
CE
=5.0 V
Figure 10. Output characteristics
CNY17-3, -4
(T
A
=25°C)
I
C
=f(V
CE
)
Figure 13. Saturation voltage versus
collector current and modulation
depth CNY17-1
V
CE
sat
=f (I
C
) (T
A
=25°C)
1
2
3
4
Figure 8. Current transfer ratio versus
temperature
(I
F
=10 mA,
V
CE
=5.0 V)
I
C
/I
F
=f (T)
Figure 11. Forward voltage
V
F
=f (I
F
)
Figure 14. Saturation voltage versus
collector current and modulation
depth CNY17-2
V
CE
sat
=f (I
C
)
(T
A
=25°C)
4
3
2
1
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–70
Figure 15. Saturation voltage versus
collector current and modulation
depth CNY17-3
V
CE
sat
=f (I
C
) (T
A
=25°C)
Figure 17. Permissible pulse load
D=parameter,
T
A
=25°C,
I
F
=f (t
p
)
Figure 19. Permissible forward
current
P
tot
=f (T
A
)
Figure 16. Saturation voltage versus
collector current and modulation
depth CNY17-4
V
CE
sat
=f (I
C
) (T
A
=25°C)
Figure 18. Permissible power
dissipation transistor and diode
P
tot
=f (T
A
)
Document Number: 83606
Revision 17-August-01
www.vishay.com
2–71
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