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BFY280H

产品描述RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
产品类别分立半导体    晶体管   
文件大小121KB,共5页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

BFY280H概述

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,

BFY280H规格参数

参数名称属性值
厂商名称Infineon(英飞凌)
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW NOISE, HIGH RELIABILITY
外壳连接EMITTER
最大集电极电流 (IC)0.01 A
基于收集器的最大容量0.27 pF
集电极-发射极最大电压8 V
配置SINGLE
最小直流电流增益 (hFE)30
最高频带L BAND
JESD-30 代码O-CRDB-F4
元件数量1
端子数量4
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式DISK BUTTON
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置RADIAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)7200 MHz
Base Number Matches1

文档预览

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HiRel
NPN Silicon RF Transistor
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ For low noise, low power amplifiers at collector
currents from 0.2 mA to 8 mA
¥ Hermetically sealed microwave package
¥
f
T
= 7.2 GHz,
F
= 2.5 dB at 2 GHz
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
BFY 280
Micro-X1
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
BFY 280 (ql)
Marking
-
Ordering Code
see below
H: High Rel Quality,
S: Space Quality,
Pin Configuration
C
E
B
E
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97302026
Ordering Code: on request
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q97111414
(see
Chapter Order Instructions
for ordering example)
Table 1
Parameter
Collector-emitter voltage
Collector-emitter voltage,
V
BE
= 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
£
104
°
C
2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction soldering point
2)
1)
2)
Maximum Ratings
Symbol
Limit Values
8
15
15
2
10
1.2
1)
80
200
-
65 É
+
200
-
65 É
+
200
< 450
Unit
V
V
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
R
th JS
The maximum permissible base current for
V
FBE
measurements is 5 mA (spot measurement duration < 1 s).
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Draft A04 1998-04-01

BFY280H相似产品对比

BFY280H BFY280P BFY280ES BFY280S Q97302026 Q97111414
描述 RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
Reach Compliance Code compliant compliant compliant compliant unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW NOISE, HIGH RELIABILITY LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
外壳连接 EMITTER EMITTER EMITTER EMITTER EMITTER EMITTER
最大集电极电流 (IC) 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
基于收集器的最大容量 0.27 pF 0.27 pF 0.27 pF 0.27 pF 0.27 pF 0.27 pF
集电极-发射极最大电压 8 V 8 V 8 V 8 V 8 V 8 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最高频带 L BAND L BAND L BAND L BAND L BAND L BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
元件数量 1 1 1 1 1 1
端子数量 4 4 4 4 4 4
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 7200 MHz 7200 MHz 7200 MHz 7200 MHz 7200 MHz 7200 MHz
最小直流电流增益 (hFE) 30 30 30 30 - -
最高工作温度 200 °C 200 °C 200 °C 200 °C - -
Base Number Matches 1 1 1 1 - -

 
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