UPS3540
5 A Schottky Barrier Rectifier
DESCRIPTION
KEY FEATURES
!
High power surface mount
package.
!
Guard Ring die construction for
transient protection.
!
Silicon Schottky rectifiers no
reverse voltage recovery.
!
Internal heat sink locking tabs
!
Low forward voltage.
!
Full metallic bottom eliminates
flux entrapment
!
Compatible with automatic
insertion equipment
!
Low profile-maximum height of
1mm supplied in 16 mm tape
reel- 5000 units/ 13” reel.
WWW .
Microsemi
.C
OM
In Microsemi’s new Powermite3
®
SMT
package, these high efficiency ultrafast
rectifiers offer the power handing
capabilities previously found only in
much larger packages. They are ideal
for SMD applications that operate at
high frequencies.
In addition to its size advantages,
Powermite3
®
package features include a full
metallic bottom that eliminates the
possibility of solder flux entrapment during
assembly, and a unique locking tab acts as
an integral heat sink. Its innovative design
makes this device ideal for use with
automatic insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ T
c
=90 ºC
Storage Temperature
Operating Temperature
Symbol
V
RRM
V
RWM
V
R
V
R (RMS)
I
o
I
FSM
T stg
T op
Value
Unit
40
28
5
100
-55 to +150
-55 to +125
V
V
A
A
ºC
ºC
APPLICATIONS/BENEFITS
!
Switching and Regulating Power
Supplies.
!
Charge Pump Circuits.
!
Reduces reverse recovery loss
due to low I
RM
.
!
Small foot print
190 X 300 mils
1:1 Actual size
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to Bottom
(1) When Mounted on PC board with 2 ounce copper pattern.
Rja (1)
3.2
ºC/Watt
UPS560
UPS560
Copyright
2003
Rev. 0., 2003-02-13
Microsemi
Page 1
UPS3540
5 A Schottky Barrier Rectifier
WWW .
Microsemi
.C
OM
Notes: 1. T
A
= T
SOLDERING POINT,
R
ΘJS
=3.2°C/W, R
Θsa
= 0º C/W.
2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode
pad dimensions .075" x 1.0", anode pad dimensions 0.25" x 1.0". R
ΘJA
in range of
15-30° C/W.
3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout
R
ΘJA
in range of 60 - 75° C/W.
ELECTRICALS
ELECTRICALS
Copyright
2003
Rev. 0., 2003-02-13
Microsemi
Page 3
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