SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - OCTOBER 1995
7
FEATURES
* SUITABLE FOR GENERAL AF APPLICATIONS AND
CLASS B AUDIO OUTPUT STAGES UPTO 3W
* HIGH h
FE
AND LOW SATURATION VOLTAGE
COMPLEMENTARY TYPE -
PARTMARKING DETAILS–
BC869
BC868
- CAC
BC868-16 - CCC
BC868-25 - CDC
BC868
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
25
20
5
2
1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
BC868-16
BC868-25
Transition Frequency
Output Capacitance
f
T
C
obo
50
85
60
100
160
60
45
MIN.
25
20
5
10
1
10
0.5
1.0
TYP.
MAX.
UNIT
V
V
V
µA
mA
µA
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=10µA
V
CB
= 25V
V
CB
= 25V,T
amb
=150
o
C
V
EB
=5V
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=1V*
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
MHz
pF
I
C
=10mA, V
CE
=5V
f = 35MHz
V
CB
=10V, f=1MHz
375
250
375
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMT449 datasheet.
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