PD - 95762
IRLMS1503PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low
R
DS(on)
N-Channel MOSFET
Lead-Free
D
D
G
1
6
A
D
D
S
V
DSS
= 30V
2
5
3
4
Description
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
®
power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET
®
power MOSFET with R
DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
R
DS(on)
= 0.10Ω
Top View
Micro6™
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
3.2
2.6
18
1.7
13
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max
75
Units
°C/W
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1/14/05
IRLMS1503PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
1.0
1.1
Typ.
0.037
6.4
1.1
1.9
4.6
4.4
10
2.0
210
90
32
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.100
V
GS
= 10V, I
D
= 2.2A
Ω
0.20
V
GS
= 4.5V, I
D
= 1.1A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 10V, I
D
= 1.1A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
9.6
I
D
= 2.2A
1.7
nC V
DS
= 24V
2.8
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 2.2A
ns
R
G
= 6.0Ω
R
D
= 6.7Ω, See Fig. 10
V
GS
= 0V
pF
V
DS
= 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
36
39
1.7
18
1.2
54
58
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
I
SD
≤
2.2A, di/dt
≤
150A/µs, V
DD
≤
V
(BR)DSS
,
2
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IRLMS1503PbF
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
TOP
10
10
1
1
3.0V
3.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
0.1
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 2.2A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
1.0
1
0.5
0.1
3.0
V DS = 10V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLMS1503PbF
350
300
20
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 2.2A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
250
200
150
100
50
0
1
Ciss
12
Coss
8
4
Crss
0
FOR TEST CIRCUIT
SEE FIGURE 9
0
2
4
6
8
10
10
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
10us
10
100us
T
J
= 150
°
C
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
T
C
= 25° C
T
J
= 150° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLMS1503PbF
Q
G
V
DS
V
GS
R
G
10V
R
D
10V
Q
GS
V
G
Q
GD
D.U.T.
+
-
V
DD
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
V
DS
50KΩ
12V
.2µF
.3µF
90%
D.U.T.
V
GS
3mA
+
V
-
DS
10%
V
GS
t
d(on)
I
G
I
D
t
r
t
d(off)
t
f
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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