Preliminary Data Sheet I0211J 12/99
IR255SG..HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Square 250 mils
4"
600 to 1200 V
Glassivated MESA
Reference IR Packaged Part:
n. a.
Major Ratings and Characteristics
Parameters
V
TM
Maximum On-state Voltage
Units
1.25 V
Test Conditions
T
J
= 25°C, I
T
= 25 A
(1)
V
DRM
/V
RRM
Direct and Reverse Breakdown Voltage
I
GT
V
GT
I
H
I
L
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
600 to 1200 V T
J
= 25°C, I
DRM
/I
RRM
= 100 µA
80 mA
2V
5 to 100 mA
300 mA
T
J
= 25° C, anode supply = 6 V, resistive load
T
J
= 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
250 x 250 mils (see drawing)
100 mm, with std. <110> flat
330 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR255SG..HCB
Preliminary Data Sheet I0211J 12/99
Ordering Information Table
Device Code
IR
1
255
2
S
3
G
4
12
5
H
6
CB
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: S = Solderable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = V
RRM
Metallization: H = Silver (Anode) - Silver (Cathode)
CB
= Probed Uncut Die (wafer in box)
Available Class
06 = 600 V
08 = 800 V
12 =1200 V
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimiters
2
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MEMS传感器
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