BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise, low distortion broadband amplifiers in
telecommunications and antenna systems and power
amplifiersfor DECT and PCN systems at collector
currents between 20 mA and 80 mA up to 2 GHz
Features
D
Low noise figure
D
High transition frequency f
T
= 7.5 GHz
D
Excellent large signal behaviour
2
1
1
2
3
4
4
13628
3
13629
BFP196TMarking: 196
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP193TRMarking: R96
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13632
BFP193TWMarking: W96
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25°C,
unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
100
500
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
T
amb
60
°C
Document Number 85091
Rev. 1, 12–Nov–01
www.vishay.com
1 (5)
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25°C,
unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35µm Cu
Symbol
R
thJA
Value
180
Unit
K/W
Electrical DC Characteristics
T
amb
= 25°C,
unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 70 mA, I
B
= 7 mA
V
CE
= 8 V, I
C
= 50 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min.
Typ.
Max.
100
100
1
0.5
150
Unit
µA
nA
µA
V
V
12
50
0.1
100
Electrical AC Characteristics
T
amb
= 25°C,
unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Test Conditions
Symbol
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
f
T
V
CB
= 10 V, f = 1 MHz
C
cb
V
CE
= 10 V, f = 1 MHz
C
ce
V
EB
= 0.5 V, f = 1 MHz
C
eb
V
CE
= 8 V, I
C
= 20 mA, Z
S
= Z
Sopt
,
F
Z
L
= 50
W,
f = 900 MHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= Z
Sopt
,
F
Z
L
= 50
W,
f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, Z
S
= Z
Sopt
,
G
pe
Z
L
= 50
W,
f = 900 MHz
V
CE
= 8 V, I
C
= 50 mA, Z
S
= Z
Sopt
,
G
pe
Z
L
= 50
W,
f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, Z
0
= 50
W,
S
21e
2
f = 900 MHz
V
CE
= 8 V, I
C
= 50 mA, Z
0
= 50
W,
S
21e
2
f = 2 GHz
V
CE
= 8 V, I
C
= 50 mA, f = 900 MHz
IP
3
Min.
6
Typ.
7.5
1.0
0.3
3.5
1.5
2.5
16
10
12.5
6.5
36
Max.
1.4
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
dBm
Power gain
Transducer gain
Third order intercept point at
output
www.vishay.com
2 (5)
Document Number 85091
Rev. 1, 12–Nov–01
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
Dimensions of BFP196T in mm
96 12240
Dimensions of BFP196TR in mm
96 12239
Document Number 85091
Rev. 1, 12–Nov–01
www.vishay.com
3 (5)
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
Dimensions of BFP196TW in mm
96 12237
www.vishay.com
4 (5)
Document Number 85091
Rev. 1, 12–Nov–01
BFP196T/BFP196TR/BFP196TW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85091
Rev. 1, 12–Nov–01
www.vishay.com
5 (5)
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