RB886G
Diodes
Schottky barrier diode
RB886G
!
Applications
High frequency detection
!
External dimensions
(Units : mm)
1.0±0.05
1.4±0.05
!
Features
1) Small mold type. (VMD2)
2) Low Ct and high detection efficiency.
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
0.5±0.05
!
Construction
Silicon epitaxial planar
ROHM : VMD2
EIAJ :
−
JEDEC :
−
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
Symbol
V
R
I
F
Tj
Tstg
Limits
5.0
10
125
−40~+125
Unit
V
mA
°C
°C
!
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminal
Symbol
V
F
I
R
C
T
Min.
−
−
−
Typ.
−
−
0.53
Max.
0.35
120
0.80
Unit
V
µA
pF
I
F
=1.0mA
V
R
=5.0V
V
R
=1.0V, f=1.0MHz
Conditions
∗
Please pay attention to static electricity when handling.
1/2
RB886G
Diodes
!
Electrical characteristic curves
(Ta=25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
10
FORWARD CURRENT : I
F
(mA)
25°C
−25°C
75°C
125°C
1000
0.9
0.8
f=1MHz
REVERSE CURRENT : I
R
(AV)
125°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
f=1.8GHz
1
100
75°C
25°C
0.1
10
−25°C
0.01
0
0.4
0.8
1.2
1.6
1
0
1
2
3
4
REVERSE VOLTAGE : V
R
(V)
5
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between
terminals characteristics
!
Spice parameter
Parameter
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IS
N
:
:
Saturation current
Emission coefficient
Ohmic resistance
Transit time
Junction capacitance
Geading coefficient
Junction potential
Depretion cap. Coefficient
Activation energy
Isat temperature exponent
Flicker noise coefficient
Flicker noise exponent
Reverse breakdown voltage
I at V-breakdown
Junction leakage resistance
Value
8.79631E-06
2.24097
6.20008
−
4.21E-13
0.346685
0.7
0.5
1.11
3
−
−
20
−
2.39557E+05
Unit
A
−
Ω
SEC
F
−
V
−
eV
−
−
−
V
A
Ω
RS :
TT
:
CJO :
M
VJ
FC
:
:
:
EG :
XTI :
KF
AF
BV
:
:
:
IBV :
RL
:
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