EN29LV010
EN29LV010
da0.
1 Megabit (128K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
FEATURES
•
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
•
High performance
- Full voltage range: access times as fast as 55
ns
- Regulated voltage range: access times as fast
as 45ns
•
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μA
typical standby current (standard access
time to active mode)
•
-
-
-
-
Flexible Sector Architecture:
Eight 16 Kbyte sectors
Supports full chip erase
Individual sector erase supported
Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
•
High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard program and erase
commands
•
JEDEC standard
DATA
polling and toggle bits
feature
•
Single Sector and Chip Erase
•
Embedded Erase and Program Algorithms
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
triple-metal double-poly triple-well CMOS Flash
Technology
•
Low Vcc write inhibit < 2.5V
•
>100K program/erase endurance cycle
•
Package options
- 4mm x 6mm 34-ball WFBGA
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
•
Commercial and industrial Temperature Range
GENERAL DESCRIPTION
The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 131,072 bytes. Any byte can be programmed typically in 8µs.The EN29LV010
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV010 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2008/04/23
EN29LV010
TABLE 3. OPERATING MODES
1M FLASH USER MODE TABLE
Operation
Read
Write
CMOS Standby
TTL Standby
Output Disable
Sector Protect
2
Sector
Unprotect
2
CE#
L
L
V
cc
±
0.3V
H
L
L
L
OE#
L
H
X
X
H
H
H
WE#
H
L
X
X
H
L
L
A0-A16
A
IN
A
IN
X
X
X
Sector address,
A6=L, A1=H, A0=L
Sector address,
A6=H, A1=H, A0=L
DQ0-DQ7
D
OUT
D
IN
High-Z
High-Z
High-Z
D
IN
, D
OUT
D
IN
, D
OUT
Notes:
1. L=logic low= V
IL
, H=Logic High= V
IH
, V
ID
=11
±
0.5V, X=Don’t Care (either L or H, but not floating!),
D
IN
=Data In, D
OUT
=Data Out, A
IN
=Address In
2. Sector protection/unprotection can be implemented by programming equipment.
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
1M FLASH MANUFACTURER/DEVICE ID TABLE
A16
to
A14
X
X
A13
to
A10
X
X
A5
to
A2
X
X
Description
Manufacturer
ID: Eon
Device ID
Sector
Protection
Verification
CE#
OE#
WE#
A9
2
A8
1
A7
A6
A1
A0
DQ7 to DQ0
L
L
L
L
H
H
V
ID
V
ID
H
X
X
L
L
L
L
L
H
1Ch
6Eh
01h
X
L
L
H
SA
X
V
ID
X
X
L
X
H
L
(Protected)
00h
(Unprotected)
Note:
1. A8=H is recommended for manufacture ID check. If a manufacture ID is read with A8=L, the chip will output a configuration
code 7Fh.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be
≤
Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2008/04/23
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