Stanford Microdevices NGA-486 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-486 typically provides +39.5 dBm output
IP3, 14.8 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @T
L
=+25°C
NGA-486
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 14.1 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
16
12
Gain (dB)
IRL
GAIN
0
-10
-20
ORL
8
4
0
0
1
2
3
4
Frequency (GHz)
5
6
Return Loss (dB)
Operates From Single Supply
Low Thermal Resistance Package
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Units
dB
dB
dB
dBm
dBm
dBm
dBm
M Hz
dB
dB
dB
V
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
4.5
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
13.3
Ty p.
14.8
14.1
13.5
19.0
18.2
39.5
34.0
5000
14.5
15.5
4.0
4.8
145
5.2
Max.
16.3
-30
-40
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
(Pow er out per tone = 0dBm)
Bandw idth
Determined by Return Loss (<-10dB)
IRL
ORL
NF
V
D
R
Th
Input Return Loss
Output Return Loss
Noise Figure
Device Voltage
Thermal Resistance
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101104 Rev. D
Preliminary
NGA-486 DC-5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Frequency (MHz)
Sy mbol
Parameter
Unit
100
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
21
NF
Small Signal Gain
Output Third Order Intercept Point
Output Pow er at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V=
V
V
SS
=88V
R
BIAS
39 Ohms
R
BIAS
== 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
15.1
39.9
19.3
21.7
35.8
18.5
3.9
14.9
40.2
19.2
20.1
29.5
18.5
3.7
14.8
39.5
19.0
18.0
24.3
18.5
3.8
14.1
34.0
18.2
14.5
15.5
18.4
4.0
13.5
32.5
17.6
14.8
15.0
18.3
4.0
12.0
28.4
14.6
17.4
16.6
17.9
4.0
Test Conditions:
Test Conditions:
I
80 mA Typ.
I
DD
==80 mA Typ.
TT
L
= 25ºC
= 25ºC
L
OIP Tone Spacing
MHz, Pout per tone
dBm
OIP
3 3
Tone Spacing ==11MHz, Pout per tone ==00dBm
ZZ
S
= Z
L
= 50 Ohms
= Z
L
= 50 Ohms
S
Noise Figure vs. Frequency
V
D
= 4.8 V, I
D
= 80 mA
5.0
Noise Figure (dB)
4.5
4.0
3.5
3.0
2.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Absolute Limit
100 mA
6V
+15 dBm
+150°C
-40°C to +85°C
+150°C
T
L
=+25ºC
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
OIP
3
vs. Frequency
V
D
= 4.8 V, I
D
= 80 mA
45
40
OIP
3
(dBm)
35
30
25
20
15
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
22
+25°C
-40°C
+85°C
P
1dB
vs. Frequency
V
D
= 4.8 V, I
D
= 80 mA
T
L
20
P
1dB
(dBm)
18
16
14
12
10
0
0.5
1
T
L
+25°C
-40°C
+85°C
1.5
2
2.5
Frequency (GHz)
3
3.5
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101104 Rev. D
Preliminary
NGA-486 DC-5 GHz Cascadable MMIC Amplifier
S
21
vs. Frequency
S
11
vs. Frequency
18
15
S
21
(dB)
12
9
6
3
0
0
1
V
D
= 4.8 V, I
D
= 80 mA
-5
V
D
= 4.8 V, I
D
= 80 mA
T
L
+25°C
-40°C
+85°C
-10
S
11
(dB)
-15
-20
-25
-30
-35
+25°C
-40°C
+85°C
T
L
0
1
2
3
4
Frequency (GHz)
5
2
3
4
Frequency (GHz)
5
6
6
-5
-10
S
12
(dB)
-15
-20
-25
-30
0
1
V
D
= 4.8 V, I
D
= 80 mA
S
12
vs. Frequency
-5
V
D
= 4.8 V, I
D
= 80 mA
S
22
vs. Frequency
T
L
+25°C
-40°C
+85°C
-10
S
22
(dB)
-15
-20
-25
-30
-35
+25°C
-40°C
+85°C
T
L
0
1
2
3
4
Frequency (GHz)
5
2
3
4
Frequency (GHz)
5
6
6
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 39 Ohms *
95
90
V
D
(Volts)
5.4
5.2
+85°C
+25°C
V
D
vs. Temperature for Constant I
D
= 80 mA
85
I
D
(mA)
80
5.0
4.8
4.6
4.4
-40°C
75
70
65
4.6
4.7
4.8
V
D
(Volts)
4.9
5.0
-40
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101104 Rev. D
Preliminary
NGA-486 DC-5 GHz Cascadable MMIC Amplifier
NGA-486 Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
4
NGA-486
3
C
B
RF out
Recommended Bias Resistor Values for I
D
=80mA
Supply Voltage(V
S
)
R
BIAS
7.5 V
33
8V
39
10 V
68
12 V
91
2
V
S
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
N4
C
D
C
B
C
B
Part Identification Marking
The part will be marked with an N4 designator on the
top surface of the package.
3
Pin #
1
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
2
GND
4
N4
1
2
3
For package dimensions, refer to outline drawing at
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