PD - 95939
IRF7233PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -12V
R
DS(on)
= 0.020Ω
6
5
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
±9.5
±6.0
±76
2.5
1.6
0.02
60
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
11/9/04
IRF7233PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-14
-12
–––
–––
-0.6
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -5.0mA
––– –––
V
V
GS
= 0V, I
D
= -250µA
0.001 ––– V/°C Reference to 25°C, I
D
= -1mA
0.013 0.020
V
GS
= -4.5V, I
D
= -9.5A
Ω
0.023 0.033
V
GS
= -2.5V, I
D
= -6.0A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -9.5A
––– -10
V
DS
= -12V, V
GS
= 0V
––– -1.0
V
DS
= -9.6V, V
GS
= 0V
µA
––– -100
V
DS
= -12V, V
GS
= 0V, T
J
= 70°C
––– -100
nA V
GS
= -12V
––– 100
V
GS
= 12V
49
74
I
D
= -9.5A
9.3
14
nC
V
DS
= -10V
22
32
V
GS
= -5.0V
26 –––
V
DD
= -10V
540 –––
I
D
= -9.5A
ns
77 –––
R
D
= 1.0Ω
370 –––
R
G
= 6.2Ω
4530 6000
V
GS
= 0V
2400 –––
pF
V
DS
= -10V
2220 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
43
35
-2.5
A
-76
-1.2
65
52
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting T
J
= 25°C, L = 1.3mH
R
G
= 25Ω, I
AS
= 9.5A.
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7233PbF
100
VGS
TOP
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
100
-ID , Drain-to-Source Current (A)
80
-ID , Drain-to-Source Current (A)
20µs PULSE WIDTH
T
J
= 25°C
6
8
80
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
60
60
40
40
20
20
0
0
2
4
-1.5V
A
10
0
0
2
4
20µs PULSE WIDTH
-1.5V T
J
= 150°C
6
8
10
A
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -9.5A
-I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
1.0
1.5
2.0
V
DS
= -10V
20µs PULSE WIDTH
2.5
3.0
A
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7233PbF
6000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1kHz
C
iss
= C
gs
+ C
gd
, C SHORTED
ds
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -9.5A
V
DS
=-10V
8
C, Capacitance (pF)
5000
C
iss
6
4000
4
3000
C
oss
C
rss
2000
0
2
4
6
8
10
12
2
A
0
0
10
20
30
40
50
60
70
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
T
J
= 25°C
-I
D
, Drain Current (A)
I
100
10
100us
10
1ms
1
0.0
1.0
2.0
V
GS
= 0V
A
3.0
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7233PbF
E
AS
, Single Pulse Avalanche Energy (mJ)
10.0
140
120
100
80
60
40
20
0
8.0
ID
TOP
-4.2A
-7.6A
BOTTOM -9.5A
-I
D
, Drain Current (A)
6.0
4.0
2.0
0.0
25
50
75
100
125
150
25
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
10
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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