< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............….......................…
Maximum junction temperature T
j m a x
..............
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
Dual switch (Half-Bridge)
450
A
1 7 5
°C
Collector-emitter voltage V
CES
......................…
1 2 0 0
V
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL t=0.8
SECTION A
DETAIL B
SECTION C-C
INTERNAL CONNECTION
9
8
Terminal code
1
2
3
4
5
6
7
8
9
10
11
TH1
TH2
G1
Es1
Cs1
C2E1
C2E1
G2
Es2
E2
C1
Tolerance otherwise specified
Division of Dimension
0.5
over
over
3
6
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
10
Tr2
Di2
Di1
Tr1
7
11
6
over 30
over 120
to 120
to 400
NTC
Th
1
2
3
4
5
Publication Date : December 2013
1
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
I
ERM
(Note1)
(Note1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, T
C
=107 °C
Pulse, Repetitive
T
C
=25 °C
DC
(Note2)
(Note3)
(Note2, 4)
(Note2, 4)
(Note3)
Conditions
Rating
1200
± 20
450
900
2775
450
900
Unit
V
V
A
W
A
Pulse, Repetitive
Item
MODULE
Symbol
V
isol
T
jmax
T
Cmax
T
jop
T
stg
Isolation voltage
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Conditions
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Instantaneous event (overload)
(Note4)
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Unit
V
°C
°C
Continuous operation (under switching)
-
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
I
CES
I
GES
V
GE(th)
V
CEsat
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=45 mA, V
CE
=10 V
I
C
=450 A, V
GE
=15 V,
Refer to the figure of test circuit
(Note5)
Limits
Min.
-
-
5.4
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
945
-
-
-
-
2.60
2.16
2.10
2.50
2.06
2.00
-
12
35.8
52.4
27.9
-
4.3
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
45
9.0
0.75
-
800
200
600
300
3.40
-
-
3.30
-
-
300
-
-
-
-
0.7
-
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
CEsat
(Chip)
I
C
=450 A,
V
GE
=15 V,
(Note5)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
(Note1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=600 V, I
C
=450 A, V
GE
=15 V
V
CC
=600 V, I
C
=450 A, V
GE
=±15 V,
R
G
=0 Ω, Inductive load
I
E
=450 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
V
CE
=10 V, G-E short-circuited
nF
nC
ns
(Terminal)
V
Emitter-collector voltage
V
EC
(Note1)
I
E
=450 A,
G-E short-circuited,
(Note5)
(Chip)
V
ns
μC
mJ
mJ
mΩ
Ω
t
rr
Q
rr
E
on
E
off
E
rr
(Note1)
(Note1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
V
CC
=600 V, I
E
=450 A, V
GE
=±15 V,
R
G
=0 Ω, Inductive load
V
CC
=600 V, I
C
=I
E
=450 A,
V
GE
=±15 V, R
G
=0 Ω, T
j
=150 °C,
Inductive load
Main terminals-chip, per switch,
T
C
=25 °C
Per switch
(Note2)
(Note1)
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
R
CC'+EE'
r
g
Publication Date : December 2013
2
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
j
=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
R
25
ΔR/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
(Note4)
(Note4)
(Note6)
Conditions
Limits
Min.
4.85
-7.3
-
-
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Unit
kΩ
%
K
mW
R
100
=493 Ω, T
C
=100 °C
Approximate by equation
T
C
=25 °C
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to case, per Inverter IGBT
Junction to case, per Inverter DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
(Note4)
(Note4)
Limits
Min.
-
-
-
Typ.
-
-
15
Max.
54
86
-
Unit
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
m
d
s
d
a
e
c
Mounting torque
Mounting torque
mass
Creepage distance
Clearance
Flatness of base plate
Item
Main terminals
Mounting to heat sink
-
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
On the centerline X, Y
(Note8)
Conditions
M 6 screw
M 5 screw
Limits
Min.
3.5
2.5
-
17
18.5
10
16.3
±0
Typ.
4.0
3.0
350
-
-
-
-
-
Max.
4.5
3.5
-
-
-
-
-
+100
Unit
N·m
N·m
g
mm
mm
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE)
2. Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
4. Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R
1
1
6.
B
(
25
/
50
)
=
ln(
25
) /(
)
,
−
R
50
T
25
T
50
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
-:Concave
+:Convex
Y
X
mounting side
mounting side
-:Concave
mounting side
+:Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
Publication Date : December 2013
3
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
GEon
R
G
Item
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across C1-E2 terminals
Applied across G1-Es1/G2-Es2 terminals
Per switch
Limits
Min.
-
13.5
0
Typ.
600
15.0
-
Max.
850
16.5
10
Unit
V
V
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : December 2013
4
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
11
5
v
GE
0V
½
½
i
E
90 %
0
i
E
t
Q
r r
=0.5×I
r r
×t
r r
I
E
-V
GE
3
4
Load
½
½
6,7
+
V
CC
i
C
t
rr
t
I
rr
0.5×I
r r
90 %
0A
+V
GE
0
-V
GE
R
G
v
GE
8
v
CE
i
C
9
10%
0A
t
d(on)
t
r
t
d(off)
t
f
t
10
Switching characteristics test circuit and waveforms
t
r r
, Q
r r
characteristics test waveform
i
E
I
EM
v
EC
V
CC
I
CM
v
CE
V
CC
i
C
i
C
V
CC
I
CM
v
CE
0A
t
0.1×I
CM
0
0.1×V
CC
0.1×V
CC
t
0
0.02×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
11
5
11
5
11
11
V
GE
=15V
3
Short-
circuited
I
C
3
Short-
circuited
5
I
E
3
Short-
circuited
5
3
V
Short-
circuited
4
6,7
4
6,7
V
V
Short-
circuited
4
6,7
4
6,7
V
V
GE
=15V
8
I
C
10
Short-
circuited
8
8
10
I
E
8
10
9
9
9
10
9
Tr1
Tr2
Di1
Di2
V
CE s a t
characteristics test circuit
V
EC
characteristics test circuit
Publication Date : December 2013
5
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
