TDF8551J
I
2
C-bus controlled 4
×
45 W power amplifier with six voltage
regulators
Rev. 02 — 18 August 2009
Product data sheet
1. General description
1.1 Amplifiers
The TDF8551J has a complementary quad audio power amplifier that uses BCDMOS
technology. It contains four amplifiers configured in Bridge-Tied Load (BTL) to drive four
speakers: two front and two rear channels. The I
2
C-bus enables diagnostic information of
each amplifier and its speaker to be read separately. Both front and both rear channel
amplifiers can be configured independently in line driver mode with a gain of 20 dB
(differential output) or amplifier mode with a gain of 26 dB (BTL output).
1.2 Voltage regulators and switches
The TDF8551J has six output voltage regulators and two power switches:
•
•
•
•
Four switchable regulators and two standby regulators
Two power switches with loss-of-ground protection and surge protection
Second supply pin to reduce dissipation by means of an external DC-to-DC converter
Backup functionality for regulator 2
2. Features
I
Amplifiers
N
I
2
C-bus control
N
Can drive a 2
Ω
load with a battery voltage of up to 16 V and a 4
Ω
load with a
battery voltage of up to 18 V
N
DC load detection: open, short and present
N
AC load (tweeter) detection
N
Programmable clip detect; 1 % or 3 %
N
Programmable thermal protection pre-warning
N
Independent short-circuit protection for each channel
N
Selectable line driver (20 dB) and amplifier mode (26 dB)
N
Loss-of-ground and open V
P
safe
N
All outputs protected from short-circuit to ground, to V
P
or across the load
N
All pins protected from short-circuit to ground
N
Soft thermal-clipping to prevent audio holes
N
Low battery detection
I
Voltage regulators and switches
N
I
2
C-bus control
NXP Semiconductors
TDF8551J
4
×
45 W power amplifier with six voltage regulators
N
Good stability for any regulator with almost any output capacitor value
N
Six voltage regulators (microcontroller, display, audio processor, tuner, bus,
mechanical digital and drive)
N
Selectable output voltages for regulators 1, 4 and 5
N
Low dropout voltage PNP output stages
N
High supply voltage ripple rejection
N
Low noise for all regulators
N
Two power switches (antenna switch and amplifier switch)
N
Standby regulators 2 and 6 (microcontroller and bus supply) operational during
load dump and thermal shutdown
N
Low standby quiescent current (regulators 2 and 6 operational only)
N
Second supply pin for connecting optional external DC-to-DC converter to reduce
internal dissipation
N
Backup functionality for regulator 2
I
Protection
N
If connection to the battery voltage is reversed, all regulator voltages will be zero
N
Withstands output voltages up to 18 V (supply line may be short-circuited)
N
Thermal protection to avoid thermal breakdown
N
Load dump protection
N
Regulator outputs protected from DC short-circuit to ground or to supply voltage
N
All regulators protected by foldback current limiting
N
Power switches protected from loss-of-ground and surge conditions
3. Applications
I
Boost amplifier and voltage regulator for car radios and CD/MD players
4. Quick reference data
Table 1.
Amplifiers
V
P(oper)
I
q(tot)
P
o(max)
operating supply
voltage
total quiescent
current
maximum output
power
R
L
= 4
Ω
no load
R
L
= 4
Ω;
V
P
= 14.4 V; V
IN
= 2 V RMS square wave
R
L
= 4
Ω;
V
P
= 15.2 V; V
IN
= 2 V RMS square wave
R
L
= 2
Ω;
V
P
= 14.4 V; V
IN
= 2 V RMS square wave
THD
V
n(o)
total harmonic
distortion
output noise voltage
P
o
= 1 W to 12 W; f = 1 kHz; R
L
= 4
Ω
filter 20 Hz to 22 kHz; R
s
= 600
Ω
line driver mode
amplifier mode
-
-
25
50
35
70
µV
µV
[1]
Quick reference data
Conditions
Min
8
-
39
44
64
-
Typ
14.4
280
41
46
69
0.01
Max Unit
18
400
-
-
-
0.1
V
mA
W
W
W
%
Symbol Parameter
TDF8551J_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 18 August 2009
2 of 47
NXP Semiconductors
TDF8551J
4
×
45 W power amplifier with six voltage regulators
Table 1.
Quick reference data
…continued
Conditions
regulators 1, 3, 4 and 5 on; switches 1 and 2 on
jump starts for t
≤
10 minutes
load dump protection for t
≤
50 ms and t
r
≥
2.5 ms
Min
10
-
-
18.1
4.75
Standby mode; V
P
= 14.4 V
regulator 1; 0.5 mA
≤
I
O
≤
400 mA; 10 V
≤
V
P
≤
18 V
IB2[D3:D2] = 01
IB2[D3:D2] = 10
IB2[D3:D2] = 11
regulator 2; 0.5 mA
≤
I
O
≤
350 mA; 10 V
≤
V
P
≤
18 V
regulator 3; 0.5 mA
≤
I
O
≤
525 mA; 5 V
≤
V
DCDC
≤
18 V
regulator 4; 0.5 mA
≤
I
O
≤
800 mA; 10 V
≤
V
P
≤
18 V
IB2[D7:D5] = 001
IB2[D7:D5] = 010
IB2[D7:D5] = 011
IB2[D7:D5] = 100
IB2[D7:D5] = 101
regulator 5; 0.5 mA
≤
I
O
≤
400 mA
10 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0001
10 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0010
10 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0011
10.5 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0100
11 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0101
11.5 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0110
13 V
≤
V
P
≤
18 V; IB1[D7:D4] = 0111
14.2 V
≤
V
P
≤
18 V; IB1[D7:D4] = 1000
12.5 V
≤
V
P
≤
18 V; IB1[D7:D4] = 1001
10 V
≤
V
P
≤
18 V; IB1[D7:D4] = 1010
10 V
≤
V
P
≤
18 V; IB1[D7:D4] = 1011
regulator 6; 0.5 mA
≤
I
O
≤
100 mA; 10 V
≤
V
P
≤
18 V
5.7
6.65
7.8
8.55
9.0
9.5
9.9
11.8
V
P
−
1
4.75
3.1
4.75
-
-
6.0
7.0
8.2
9.0
9.5
10.0
10.4
12.5
5.0
3.3
5.0
0.6
0.6
6.3
8.6
V
V
7.37 V
9.45 V
10.0 V
10.5 V
10.9 V
13.2 V
V
V
5.25 V
3.5
5.25 V
1.1
1.1
V
V
4.75
5.7
6.6
8.1
7.6
5.0
6.0
7.0
8.6
8.0
5.25 V
6.3
7.4
9.1
8.4
V
V
V
V
7.9
8.1
4.75
3.1
3.1
8.3
8.6
5.0
3.3
3.3
8.7
9.1
3.5
3.5
V
V
V
V
-
Typ
14.4
-
-
22
5.0
180
Max Unit
18
30
50
-
V
P
250
V
V
V
V
V
µA
Symbol Parameter
Voltage regulators
V
P
supply voltage
V
th(dis)
V
DCDC
I
q(tot)
V
O(reg)
disable threshold
voltage
DC-to-DC converter
voltage
total quiescent
current
regulator output
voltage
regulator 1, 3, 4 and 5 on; switches 1 and 2 on
5.25 V
V
P
−
0.5 -
Power switches
V
do
dropout voltage
switch 1; I
O
= 400 mA
switch 2; I
O
= 400 mA
[1]
voltage on pin V
p1
and/or pin V
p2
TDF8551J_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 18 August 2009
3 of 47
NXP Semiconductors
TDF8551J
4
×
45 W power amplifier with six voltage regulators
5. Ordering information
Table 2.
Ordering information
Package
Name
TDF8551J
DBS37P
Description
plastic DIL-bent-SIL power package; 37 leads (lead length 6.8 mm)
Version
SOT725-1
Type number
TDF8551J_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 18 August 2009
4 of 47
NXP Semiconductors
TDF8551J
4
×
45 W power amplifier with six voltage regulators
6. Block diagram
REGULATOR 6
28
REG6
BUCAP
36
REGULATOR 2
37
REG2
BACKUP
SWITCH
REFERENCE
VOLTAGE
TEMPERATURE AND
LOAD DUMP
PROTECTION VOLTAGE
REGULATOR
V
P
35
REGULATOR 1
30
REG1
V
DCDC
26
REGULATOR 3
31
REG3
ENABLE
LOGIC
REGULATOR 4
33
REG4
REGULATOR 5
34
REG5
SWITCH 1
29
SW1
SWITCH 2
27
32
20
SW2
GND
V
P1
V
P2
DIAG
SDA
SCL
STB
2
4
22
STANDBY/MUTE
I
2
C-BUS
INTERFACE
TDF8551J
6
25
CLIP DETECT/DIAGNOSTIC
IN1
11
MUTE
9
26 dB/
20 dB
OUT1+
OUT1−
7
PROTECTION/
DIAGNOSTIC
IN2
15
MUTE
17
26 dB/
20 dB
OUT2+
OUT2−
19
PROTECTION/
DIAGNOSTIC
IN3
12
MUTE
5
26 dB/
20 dB
OUT3+
OUT3−
3
PROTECTION/
DIAGNOSTIC
IN4
14
VP
MUTE
21
26 dB/
20 dB
OUT4+
OUT4−
23
PROTECTION/
DIAGNOSTIC
TEMPERATURE AND LOAD
DUMP PROTECTION
AMPLIFIER
10
SVR
13
SGND
ACGND
16
8
1
18
24
001aaj105
PGND1
PGND3
PGND2/TAB
PGND4
Fig 1.
Block diagram
TDF8551J_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 18 August 2009
5 of 47
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