TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
Qualified Level
2N4449
2N4449U
2N4449UA
2N4449UB
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Symbol
V
CEO
V
EBO
V
CBO
V
CES
All UB
20
6.0
All others
15
4.5
Unit
Vdc
Vdc
Vdc
Vdc
W
W
40
40
0
@ T
A
= +25 C @ T
C
= +25
0
C
Total Power Dissipation
2N2369A; 2N4449
0.50
(1)
1.2
(2)
All UA
0.50
(5)
1.2
(2)
P
T
(6)
All UB
0.40
1.4
(7)
All U
0.60
(3)
1.5
(4)
Operating & Storage Junction Temperature Range T
op
,
T
stg
-65 to +200
TO-18* (TO-206AA)
2N2369A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
1) Derate linearly 3.08 mW/
0
C above T
A
= +37.5
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
3) Derate linearly 3.44 mW/
0
C above T
A
= +63.5
0
C
4) Derate linearly 8.55 mW/
0
C above T
C
= +63.5
0
C
TO-46 (TO-206AB)
2N4449
Symbol
Max.
146
125
135
117
325
350
437
291
0
Unit
R
θ
JC
C/mW
SURFACE MOUNT
UA*
R
θ
JA
0
C/mW
SURFACE MOUNT
UB*
5) Derate linearly 2.86 mW/
0
C above T
C
= +63.5
0
C
6) Derate linearly 2.29 mW/
0
C above T
C
= +63.5
0
C
7) Derate linearly 8.00 mW/
0
C above T
C
= +63.5
0
C
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CES
Min.
15
0.4
10
0.25
10
0.2
µAdc
Max.
Unit
Vdc
µAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Emitter Cutoff Current
V
CE
= 20 Vdc
Emitter-Base Breakdown Voltage
V
EB
= 4.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
Collector-Base Breakdown Voltage
V
CB
= 40 Vdc
Collector-Base Cutoff Current
V
CB
= 32 Vdc
I
EBO
I
CBO
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 0.35 Vdc
I
C
= 30 mAdc, V
CE
= 0.4 Vdc
I
C
= 10 mAdc, V
CE
= 1.0 Vdc
I
C
= 100 mAdc, V
CE
= 1.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 100 mAdc, I
B
= 10 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 100 mAdc, I
B
= 10 mAdc
40
30
40
20
120
120
120
120
0.20
0.25
0.45
0.70
0.80
0.85
0.90
1.20
h
FE
V
CE(sat)
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
h
fe
C
obo
C
ibo
5.0
10
4.0
5.0
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
I
C
= 10 mAdc; I
B1
=
3.0 mAdc, I
B2
=
1.5 mAdc
Turn-Off Time
I
C
= 10 mAdc; I
B1
=
3.0 mAdc
,
I
B2
=
1.5 mAdc
Charge Storage Time
I
C
= 10 mAdc; I
B1
=
10 mAdc
,
I
B2
=
10 mAdc
t
on
12
18
13
ηs
ηs
ηs
t
off
t
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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