TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices
2N6987
2N6987U
2N6988
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
(1)
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
(4)
Emitter-Base Voltage
(4)
Collector Current
Total Power Dissipation
(4)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
60
60
5.0
600
1.5
1.0
0.4
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
0
2N6987*
TO- 116
@ T
A
= +25
0
C
2N6987
(2)
P
T
2N6987U
(2)
2N6988
(3)
Operating & Storage Junction Temperature Range
T
op
,
T
stg
1) Maximum voltage between transistors shall be
≥
500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C
3) Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C.
4) Ratings apply to each transistor in the array.
C
2N6987U*
20 PIN LEADLESS
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)CEO
I
CBO
Min.
60
10
10
10
50
Max.
Unit
Vdc
µAdc
ηAdc
µAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 50 Vdc
Emitter-Base Cutoff Current
V
BE
= 5.0 Vdc
V
EB
= 3.5 Vdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6987, 2N6988 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
=10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
75
100
100
100
50
450
300
h
FE
V
CE(sat)
0.4
1.6
1.3
2.6
Vdc
Vdc
V
BE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 2.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
h
fe
C
obo
C
ibo
2.0
100
8.0
8.0
30
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
